Биполярный транзистор 2SC2406 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2406
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 55 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: SOT89
2SC2406 Datasheet (PDF)
2sc2405 2sc2406.pdf
Transistor2SC2405, 2SC2406Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA1034 and 2SA1035Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape
2sc2406.pdf
SMD Type TransistorsNPN Transistors2SC2406SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=55V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1035+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc2405 e.pdf
Transistor2SC2405, 2SC2406Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA1034 and 2SA1035Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape
2sc2404 e.pdf
Transistor2SC2404Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Abs
2sc2404.pdf
Transistor2SC2404Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Abs
2sc2405.pdf
SMD Type TransistorsNPN Transistors2SC2405SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=35V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1034+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc2404.pdf
SMD Type TransistorsNPN Transistors2SC2404SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc2408.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2408DESCRIPTIONLow NoiseNF = 2.4 dB TYP. ;@ f = 200 MHzHigh GainS 2 = 21 dB TYP. ;@ f = 200 MHz21eMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in high frequency wide band amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
