2SC2406 PDF and Equivalents Search

Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape ... See More ⇒

SMD Type Transistors NPN Transistors 2SC2406 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=55V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1035 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector... See More ⇒

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Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape ... See More ⇒

Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Abs... See More ⇒

Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Abs... See More ⇒

SMD Type Transistors NPN Transistors 2SC2405 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=35V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1034 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector... See More ⇒

SMD Type Transistors NPN Transistors 2SC2404 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle... See More ⇒

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz High Gain S 2 = 21 dB TYP. ;@ f = 200 MHz 21e Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒