Справочник транзисторов. 2SC2567A

 

Биполярный транзистор 2SC2567A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2567A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 160 MHz
   Ёмкость коллекторного перехода (Cc): 3.5 pf
   Статический коэффициент передачи тока (hfe): 350
   Корпус транзистора: TO236

 Аналоги (замена) для 2SC2567A

 

 

2SC2567A Datasheet (PDF)

 8.1. Size:121K  1
2sc2561.pdf

2SC2567A
2SC2567A

 8.2. Size:71K  toshiba
2sc2565.pdf

2SC2567A

 8.3. Size:192K  jmnic
2sc2564.pdf

2SC2567A
2SC2567A

JMnic Product Specification Silicon NPN Power Transistors 2SC2564 DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings

 8.4. Size:201K  jmnic
2sc2562.pdf

2SC2567A
2SC2567A

JMnic Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION With TO-220 package Complement to type 2SA1012 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 EmitterAbsolute

 8.5. Size:200K  jmnic
2sc2565.pdf

2SC2567A
2SC2567A

JMnic Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings

 8.6. Size:228K  inchange semiconductor
2sc2564.pdf

2SC2567A
2SC2567A

isc Silicon NPN Power Transistor 2SC2564DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 8.7. Size:201K  inchange semiconductor
2sc2563.pdf

2SC2567A
2SC2567A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2563DESCRIPTIONHigh power dissipationLow Saturation VoltageHigh VCBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency output amplifier and general purposeapplicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.8. Size:221K  inchange semiconductor
2sc2562.pdf

2SC2567A
2SC2567A

isc Silicon NPN Power Transistor 2SC2562DESCRIPTIONLow Collector Saturation Voltage:V = 0.4(V)(Max)@I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.9. Size:220K  inchange semiconductor
2sc2565.pdf

2SC2567A
2SC2567A

isc Silicon NPN Power Transistor 2SC2565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1095Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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