2SC2567A Specs and Replacement
Type Designator: 2SC2567A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
Package: TO236
- BJT ⓘ Cross-Reference Search
2SC2567A datasheet
8.3. Size:192K jmnic
2sc2564.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC2564 DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
8.4. Size:201K jmnic
2sc2562.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION With TO-220 package Complement to type 2SA1012 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute... See More ⇒
8.5. Size:200K jmnic
2sc2565.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
8.6. Size:228K inchange semiconductor
2sc2564.pdf
isc Silicon NPN Power Transistor 2SC2564 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
8.7. Size:201K inchange semiconductor
2sc2563.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2563 DESCRIPTION High power dissipation Low Saturation Voltage High V CBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency output amplifier and general purpose application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
8.8. Size:221K inchange semiconductor
2sc2562.pdf
isc Silicon NPN Power Transistor 2SC2562 DESCRIPTION Low Collector Saturation Voltage V = 0.4(V)(Max)@I = 3A CE(sat) C High Switching Speed Complement to Type 2SA1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
8.9. Size:220K inchange semiconductor
2sc2565.pdf
isc Silicon NPN Power Transistor 2SC2565 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1095 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 2SC2562, 2SC2562O, 2SC2562R, 2SC2563, 2SC2564, 2SC2565, 2SC2566, 2SC2567, BC639, 2SC2568, 2SC2569, 2SC257, 2SC2570, 2SC2570A, 2SC2571, 2SC2571-1, 2SC2571-2
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