Справочник транзисторов. 2SC2589

 

Биполярный транзистор 2SC2589 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2589

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 200 W

Макcимально допустимое напряжение коллектор-база (Ucb): 180 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 30 MHz

Ёмкость коллекторного перехода (Cc): 300 pf

Статический коэффициент передачи тока (hfe): 90

Корпус транзистора: TO3

Аналоги (замена) для 2SC2589

 

 

2SC2589 Datasheet (PDF)

4.1. 2sc2580.pdf Size:49K _wingshing

2SC2589

2SC2580 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1105 ABSOLUTE MAXIMUM RATING (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 9 A Collector

4.2. 2sc2581.pdf Size:25K _wingshing

2SC2589

2SC2581 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1106 ABSOLUTE MAXIMUM RATING (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collector Di

 4.3. 2sc2585.pdf Size:20K _advanced-semi

2SC2589

2SC2585 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz. MAXIMUM RATINGS IC 65 mA VCEO 12 V VCBO 25 V VEB 1.5 V PT 400 mW @ TC = 166 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 85 OC/W ?JC 2 & 4 =

4.4. 2sc2582.pdf Size:156K _jmnic

2SC2589
2SC2589

JMnic Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION · ·With TO-126 package ·Large collector power dissipation ·High transition frequency APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 4.5. 2sc2580.pdf Size:146K _jmnic

2SC2589
2SC2589

JMnic Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1105 ·High power dissipation ·High current capability APPLICATIONS ·Audio power amplifier ·DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolu

4.6. 2sc2581.pdf Size:146K _jmnic

2SC2589
2SC2589

JMnic Product Specification Silicon NPN Power Transistors 2SC2581 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1106 ·High power dissipation ·High current capability APPLICATIONS ·Audio power amplifier ·DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolu

4.7. 2sc2582.pdf Size:126K _inchange_semiconductor

2SC2589
2SC2589

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION Ў¤ With TO-126 package Ў¤ Large collector power dissipation Ў¤ High transition frequency APPLICATIONS Ў¤ Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO V

4.8. 2sc2580.pdf Size:117K _inchange_semiconductor

2SC2589
2SC2589

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1105 Ў¤ High power dissipation Ў¤ High current capability APPLICATIONS Ў¤ Audio power amplifier Ў¤ DC-DC converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESC

4.9. 2sc2588.pdf Size:145K _inchange_semiconductor

2SC2589
2SC2589

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2588 DESCRIPTION · ·With MT-200 package ·Excellent safe operating area ·Fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to

4.10. 2sc2581.pdf Size:117K _inchange_semiconductor

2SC2589
2SC2589

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2581 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1106 Ў¤ High power dissipation Ў¤ High current capability APPLICATIONS Ў¤ Audio power amplifier Ў¤ DC-DC converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESC

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

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