Справочник транзисторов. 2SC2595

 

Биполярный транзистор 2SC2595 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2595
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 1.2 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 4000 MHz
   Ёмкость коллекторного перехода (Cc): 5 pf
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO131

 Аналоги (замена) для 2SC2595

 

 

2SC2595 Datasheet (PDF)

 8.1. Size:83K  panasonic
2sc2594.pdf

2SC2595
2SC2595

 8.2. Size:80K  panasonic
2sc2590.pdf

2SC2595
2SC2595

Power Transistors2SC2590Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features Excellent collector current IC characteristics of forward currenttransfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute

 8.3. Size:62K  no
2sc2591.pdf

2SC2595

 8.4. Size:114K  jmnic
2sc2591 2sc2592.pdf

2SC2595
2SC2595

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-

 8.5. Size:181K  jmnic
2sc2590.pdf

2SC2595
2SC2595

JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification

 8.6. Size:191K  inchange semiconductor
2sc2594.pdf

2SC2595
2SC2595

isc Silicon NPN Power Transistor 2SC2594DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 20V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifierFor electronic flash unitConverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.7. Size:166K  inchange semiconductor
2sc2591 2sc2592.pdf

2SC2595
2SC2595

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

 8.8. Size:187K  inchange semiconductor
2sc2592.pdf

2SC2595
2SC2595

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC2592DESCRIPTIONSilicon NPN epitaxial planar typeHigh transition frequencyComplement to Type 2SA1112100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF Driver,High power Amplifier complementaryPairs with 2SA1112.ABSOLUTE MAXIMUM RATINGS(T

 8.9. Size:198K  inchange semiconductor
2sc2590.pdf

2SC2595
2SC2595

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2590DESCRIPTIONSilicon NPN epitaxial planar typeHigh transition frequencyComplementary to 2SA1110100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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