Биполярный транзистор 2SC2595 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2595
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 1.2 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 4000 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO131
2SC2595 Datasheet (PDF)
2sc2590.pdf
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Power Transistors2SC2590Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features Excellent collector current IC characteristics of forward currenttransfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute
2sc2591 2sc2592.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-
2sc2590.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification
2sc2594.pdf
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isc Silicon NPN Power Transistor 2SC2594DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 20V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifierFor electronic flash unitConverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
2sc2591 2sc2592.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
2sc2592.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC2592DESCRIPTIONSilicon NPN epitaxial planar typeHigh transition frequencyComplement to Type 2SA1112100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF Driver,High power Amplifier complementaryPairs with 2SA1112.ABSOLUTE MAXIMUM RATINGS(T
2sc2590.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2590DESCRIPTIONSilicon NPN epitaxial planar typeHigh transition frequencyComplementary to 2SA1110100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
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