Справочник транзисторов. 2SC2667

 

Биполярный транзистор 2SC2667 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2667
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 270 MHz
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO128

 Аналоги (замена) для 2SC2667

 

 

2SC2667 Datasheet (PDF)

 8.1. Size:473K  toshiba
2sc2669.pdf

2SC2667
2SC2667

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VC

 8.2. Size:502K  toshiba
2sc2668.pdf

2SC2667
2SC2667

2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit: mm FM, RF, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.70 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VColle

 8.3. Size:651K  mcc
2sc2668-r.pdf

2SC2667
2SC2667

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

 8.4. Size:651K  mcc
2sc2668-o.pdf

2SC2667
2SC2667

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

 8.5. Size:651K  mcc
2sc2668-y.pdf

2SC2667
2SC2667

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

 8.6. Size:134K  secos
2sc2668.pdf

2SC2667
2SC2667

2SC2668 0.02A , 40V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Small Reverse Transfer Capacitance. Low Noise Figure. Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 15.1 15.5 Product-Rank 2SC2668-R 2SC2668-O 2SC2

 8.7. Size:203K  lge
2sc2668.pdf

2SC2667
2SC2667

2SC2668 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Low Noise Figure MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters)IC Co

 8.8. Size:124K  inchange semiconductor
2sc2660 2sc2660a.pdf

2SC2667
2SC2667

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION With TO-220 package Complement to type 2SA1133/1133A High VCEO Large PC APPLICATIONS Power amplifier applications TV vertical deflection applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ra

 8.9. Size:197K  inchange semiconductor
2sc2665.pdf

2SC2667
2SC2667

isc Silicon NPN Power Transistor 2SC2665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

 8.10. Size:197K  inchange semiconductor
2sc2660.pdf

2SC2667
2SC2667

isc Silicon NPN Power Transistor 2SC2660DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SA1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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