2SC2667 Datasheet, Equivalent, Cross Reference Search

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VC

2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit: mm FM, RF, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.70 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VColle

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

2SC2668 0.02A , 40V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Small Reverse Transfer Capacitance. Low Noise Figure. Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 15.1 15.5 Product-Rank 2SC2668-R 2SC2668-O 2SC2

2SC2668 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Low Noise Figure MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters)IC Co

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION With TO-220 package Complement to type 2SA1133/1133A High VCEO Large PC APPLICATIONS Power amplifier applications TV vertical deflection applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ra

isc Silicon NPN Power Transistor 2SC2665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

isc Silicon NPN Power Transistor 2SC2660DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SA1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=