2SC2711 - Даташиты. Аналоги. Основные параметры

2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter v

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit mm High power gain Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCE

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit mm FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit mm High gain Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FE Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage V = 120 V CEO Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small pack

2SC2712 Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage VCEO = 50 V (3) High collector current IC = 150 mA (max) (4) High hFE hFE = 70 to 700 (5) Excellent h

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package

2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 For Audio Amplifier Applications Unit mm High DC current gain hFE (1) = 100 320 Complementary to 2SA1150 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector cur

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current V = 50 V, I = 150 mA (max) CEO C Excellent h linearity h (I = 0.1 mA)/ h (I = 2 mA) FE FE C FE C = 0.95 (typ.) High h h = 70 to 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) C

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2S

2SC2717 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Gain Gpe=33 dB(Typ.)(f =45MHz) G H Good Linearity of hFE Base Emitter J Collector A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E

2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Small reverse Transfer Capacitance Cre=0.7pF(typ.) A L Low Noise Figure NF=2.5dB(typ.)(f=100MHz) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2714-R 2SC2714-O 2SC2

2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Noise NF=1dB(Typ.), 10db(Max.) A L Complements of the 2SA1162 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70 140 120 240 20

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value

2SC2715 SOT-23 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER High Power Gain 3. COLLECTOR Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC C

2SC2714 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -C

2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE 2. EMITTER Low Noise NF=1 dB (Typ),10dB(MAX) 3. COLLECTOR Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collecto

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2712 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - C

2SC2715 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High Power Gain Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

2SC2717(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features High Gain Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 4 V

2SC2712 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collec

2SC2714 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters) VEBO Emitter-

2SC2714 NPN General Purpose Transistors P b Lead(Pb)-Free SOT-23 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=10 A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO V Ic=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10 A,IC=0 4 V Collector cut-o

2SC2715 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. / Applications High frequency a

2SC2717M(BR3DG2717M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,h FE High gain, good linearity of hFE. / Applications TV final picture IF amplifier applications. / Equival

2SC2712 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High voltage, high current, high hFE, low noise, excellent hFE linearity. / Applications Audio frequency genera

SMD Type Transistors NPN Transistors 2SC2716 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collect

SMD Type Transistors NPN Transistors 2SC2715 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Colle

SMD Type Transistors NPN Transistors 2SC2714 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

SMD Type Transistors NPN Transistors 2SC2712 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High voltage and high current VCEO = 50 V, IC = 150 mA (max) 1 2 Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) 1.Base 2.Emitter 3.collector

SMD Type Transistors NPN Transistors 2SC2713 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High voltage VCEO = 120 V High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Small package 1.9+0.1 -0.1 Complementary to 2SA1163 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

2SC2712LT1 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current Vceo=50V,Ic=150mA(Max.) Package SOT-23 * Excellent hFE Linearity hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) * High hFE hFE=70-700 * Low Noise NF=1dB(Typ.),10dB(Max.) * Complementary to 2SA1162 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic

R UMW UMW 2SC2712 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V

2SC2712 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features High voltage and high current VCEO = 50 V, IC = 150 mA (max) Simplified outline(SOT-23) Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V

2SC2714Y MAXIMUM RATINGS Parameter Symbol Rating Unit GENERAL PURPOSE Collector-Emitter Voltage V 20 V TRANSISTOR NPN SILICON CEO 225mW 50mA 20V Collector-Base Voltage V 30 CBO V Emitter Base Voltage V 3.0 EBO V 3 Collector Current I 50 mA C 3 1 Total Device Dissipation(T =25 ) A P 225 mW tot 2 1 2 Thermal Resistance Junction to Ambient R 556 /W (th)ja

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. 2SC2712 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 5.0 Vdc -

Plastic-Encapsulate Transistors FEATURES (NPN) 2SC2714 Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA 1. BASE Collector

Plastic-Encapsulate Transistors FEATURES (NPN) 2SC2712 Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA 1. BASE Collector Power Dissipation PC 150 mW 2. E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION High Power Gain- Gp 12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emit

isc Silicon NPN Power Transistor 2SC2712 DESCRIPTION With SOT-23 packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO