2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mmFM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage

2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Small reverse Transfer CapacitanceCre=0.7pF(typ.) AL Low Noise FigureNF=2.5dB(typ.)(f=100MHz) 33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2714-R 2SC2714-O 2SC2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

2SC2714TRANSISTOR (NPN)SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance:Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 V IC Collector Current -C

2SC2714 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VDimensions in inches and (millimeters)VEBO Emitter-

2SC2714NPN General Purpose TransistorsP b Lead(Pb)-FreeSOT-23 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO VIc=10A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO VIc=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 4 VCollector cut-o

SMD Type TransistorsNPN Transistors2SC2714SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

2SC2714YMAXIMUM RATINGSParameter Symbol Rating UnitGENERAL PURPOSE Collector-Emitter VoltageV 20 V TRANSISTOR NPN SILICON CEO225mW50mA20VCollector-Base VoltageV 30CBOVEmitterBase VoltageV 3.0EBO V3Collector CurrentI 50 mAC31Total Device Dissipation(T =25)A P 225 mWtot21 2Thermal Resistance Junction to AmbientR 556 /W(th)ja

Plastic-Encapsulate TransistorsFEATURES(NPN)2SC2714Small reverse Transfer Capacitance:Cre=0.7pF(typ.)Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 40 VVCEOCollector-Emitter Voltage 30 VVEBOEmitter-Base Voltage 4 VICCollector Current -Continuous 20 mA1. BASECollector