2SC2714Y - Даташиты. Аналоги. Основные параметры

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

2SC2714Y MAXIMUM RATINGS Parameter Symbol Rating Unit GENERAL PURPOSE Collector-Emitter Voltage V 20 V TRANSISTOR NPN SILICON CEO 225mW 50mA 20V Collector-Base Voltage V 30 CBO V Emitter Base Voltage V 3.0 EBO V 3 Collector Current I 50 mA C 3 1 Total Device Dissipation(T =25 ) A P 225 mW tot 2 1 2 Thermal Resistance Junction to Ambient R 556 /W (th)ja

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit mm FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage

2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Small reverse Transfer Capacitance Cre=0.7pF(typ.) A L Low Noise Figure NF=2.5dB(typ.)(f=100MHz) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2714-R 2SC2714-O 2SC2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

2SC2714 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -C

2SC2714 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters) VEBO Emitter-

2SC2714 NPN General Purpose Transistors P b Lead(Pb)-Free SOT-23 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=10 A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO V Ic=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10 A,IC=0 4 V Collector cut-o

SMD Type Transistors NPN Transistors 2SC2714 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

Plastic-Encapsulate Transistors FEATURES (NPN) 2SC2714 Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA 1. BASE Collector