2SC2816 - описание и поиск аналогов

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

JMnic Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION With TO-220C package High voltage High speed APPLICATIONS For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UN

isc Silicon NPN Power Transistor 2SC2816 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

Ordering number ENN7198 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features Package Dimensions Miniature package facilitates miniaturization in end unit mm products. 2204 High breakdown voltage. [2SA1179N / 2SC2812N] 0.42 0.131 3 0 0.1 1 2 0.95 0.95 1.9 1 Base 2.92 2

Ordering number EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose 2SA1179N / 2SC2812N Amp Applications Features Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) 2SA1179N Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

Ordering number EN693F NPN Epitaxial Planar Silicon Transistor 2SC2814 High-Friquency General-Purpose Amplifier Applications Features Package Dimensions Very small package enabiling compactness and unit mm slimness of sets. 2018A High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2814] typ). C Collector B Base E Emitter SANYO CP Specifications Absolute Maximu

JMnic Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION With TO-220C package High voltage,High speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emit

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2810 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2815 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB