2SC2816 Datasheet and Replacement

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

JMnic Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION With TO-220C package High voltage High speed APPLICATIONS For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UN

isc Silicon NPN Power Transistor 2SC2816DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Ordering number : ENN71982SA1179N / 2SC2812NPNP / NPN Epitaxial Planar Silicon Transistors2SA1179N / 2SC2812NLow-Frequency General-PurposeAmp ApplicationsFeaturesPackage Dimensions Miniature package facilitates miniaturization in endunit : mmproducts.2204 High breakdown voltage.[2SA1179N / 2SC2812N]0.42 0.13130 0.11 20.95 0.951.91 : Base2.922

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

Ordering number:EN693FNPN Epitaxial Planar Silicon Transistor2SC2814High-FriquencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small package enabiling compactness andunit:mmslimness of sets.2018A High fT and small cre (fT=320MHz typ, cre=0.95pF[2SC2814]typ).C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximu

JMnic Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION With TO-220C package High voltage,High speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emit

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2810DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2815DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB