Справочник транзисторов. 2SC2865A

 

Биполярный транзистор 2SC2865A - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2865A

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 200 W

Макcимально допустимое напряжение коллектор-база (Ucb): 250 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 20 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 50

Корпус транзистора: TO3

Аналоги (замена) для 2SC2865A

 

 

2SC2865A Datasheet (PDF)

4.1. 2sc2869.pdf Size:31K _nec

2SC2865A

4.2. 2sc2860.pdf Size:125K _panasonic

2SC2865A
2SC2865A

 5.1. 2sc2881-y.pdf Size:231K _update

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MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon • With SOT-89 package • Power amplifier applications Power Transistors • Epoxy meet

5.2. 2sc2883-y.pdf Size:428K _update

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MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC2883-Y Fax: (818) 701-4939 Features • Power amplifier applications NPN Silicon • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors • Epoxy meets UL 94 V-0 flammability

 5.3. 2sc2873-y.pdf Size:289K _update

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MCC 2SC2873-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2873-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Low saturation voltage NPN Silicon • High speed switching time Epitaxial Transistors • Complementary to 2SA1213 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

5.4. 2sc2883-o.pdf Size:428K _update

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MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC2883-Y Fax: (818) 701-4939 Features • Power amplifier applications NPN Silicon • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors • Epoxy meets UL 94 V-0 flammability

 5.5. 2sc2873-o.pdf Size:289K _update

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MCC 2SC2873-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2873-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Low saturation voltage NPN Silicon • High speed switching time Epitaxial Transistors • Complementary to 2SA1213 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

5.6. 2sc2873y-g.pdf Size:164K _update

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General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. SOT-89-3L Circuit Diagram 0.181(4.60) Collector 0.173(4.40) 1 : BASE 2 0.061(1.55) 2 : COLLECTOR REF. 3 : EMITTER 1 Base 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 3 Emitter 0.020(0.52) 0.023(0.

5.7. 2sc2873o-g.pdf Size:164K _update

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General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. SOT-89-3L Circuit Diagram 0.181(4.60) Collector 0.173(4.40) 1 : BASE 2 0.061(1.55) 2 : COLLECTOR REF. 3 : EMITTER 1 Base 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 3 Emitter 0.020(0.52) 0.023(0.

5.8. 2sc2881-o.pdf Size:231K _update

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MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon • With SOT-89 package • Power amplifier applications Power Transistors • Epoxy meet

5.9. 2sc2882.pdf Size:137K _toshiba

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2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Unit: mm Voltage Amplifier Applications • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • P = 1.0 to 2.0 W (mounted on ceramic substrate) C • Complementary to 2SA1202 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

5.10. 2sc2881.pdf Size:145K _toshiba

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2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit: mm Power Amplifier Applications • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°C) Cha

5.11. 2sc2878.pdf Size:277K _toshiba

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2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C • Low on resistance: R = 1 ? (typ.) (I = 5 mA) ON B Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-bas

5.12. 2sc2880.pdf Size:187K _toshiba

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2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: f = 120 MHz T • Small flat package • P = 1.0 to 2.0 W (mounted on ceramic substrate) C • Complementary to 2SA1200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

5.13. 2sc2824.pdf Size:107K _toshiba

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 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.14. 2sc2883.pdf Size:146K _toshiba

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2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit: mm • Suitable for output stage of 3 watts amplifier • Small flat package • P = 1.0 to 2.0 W (mounted on ceramic substrate) C • Complementary to 2SA1203 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO

5.15. 2sc2879.pdf Size:166K _toshiba

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2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100W PEP Power Gain : Gp = 13dB Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -24dB(Max.) (MIL Standard) MAXIMUM RATINGS

5.16. 2sc2884.pdf Size:145K _toshiba

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2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1204 Maximum Ratings (Ta = 25°C) Characteristics Symbol

5.17. 2sc2873.pdf Size:186K _toshiba

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2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC2873 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (I C = 1 A) • High speed switching time: t = 1.0 µs (typ.) stg • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1213 Maxim

5.18. 2sc2859.pdf Size:192K _toshiba

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2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1182. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-

5.19. 2sc2814.pdf Size:144K _sanyo

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Ordering number:EN693F NPN Epitaxial Planar Silicon Transistor 2SC2814 High-Friquency General-Purpose Amplifier Applications Features Package Dimensions Very small package enabiling compactness and unit:mm slimness of sets. 2018A High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2814] typ). C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Rat

5.20. 2sc2839.pdf Size:145K _sanyo

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Ordering number:EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features Package Dimensions Very small package enabiling compactness and unit:mm slimness of sets. 2033 High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2839] typ). B : Base C : Collector E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter

5.21. 2sa1179n 2sc2812n.pdf Size:35K _sanyo

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Ordering number : EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose 2SA1179N / 2SC2812N Amp Applications Features Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions R

5.22. 2sc2812n.pdf Size:28K _sanyo

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Ordering number : ENN7198 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features Package Dimensions Miniature package facilitates miniaturization in end unit : mm products. 2204 High breakdown voltage. [2SA1179N / 2SC2812N] 0.42 0.131 3 0 0.1 1 2 0.95 0.95 1.9 1 : Base 2.92 2 : Emitte

5.23. 2sc2840.pdf Size:183K _sanyo

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5.24. 2sc2857.pdf Size:80K _sanyo

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Ordering number:EN753C NPN Triple Diffused Planar Silicon Transistor 2SC2857 High-Voltage Driver Applications Applications Package Dimensions Color TV vertical driver, sound driver applications. unit:mm 2003A Features [2SC2857] High breakdown voltage (VCEO? 180V) High collector dissipation (PC=500mW) JEDEC : TO-92 B : Base EIAJ : SC-43 C : Collector E : Emitter SANYO : NP Sp

5.25. 2sc2885 2sc2946.pdf Size:128K _nec

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DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are three

5.26. 2sc2851 e.pdf Size:48K _panasonic

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Transistor 2SC2851 Silicon NPN epitaxial planer type For high-frequency power amplification Unit: mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f = 175MHz). 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 36 V Collector to emitter voltage VCEO 16 V +0.2 +0.2

5.27. 2sc2855 2sc2856.pdf Size:45K _hitachi

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2SC2855, 2SC2856 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC2855 2SC2856 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltag

5.28. 2sc2899.pdf Size:38K _hitachi

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2SC2899 Silicon NPN Triple Diffused Application High speed and high voltage switching Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 0.5 A Collector peak current IC(peak) 1.0 A

5.29. 2sc2853 2sc2854.pdf Size:24K _hitachi

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2SC2853, 2SC2854 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1188 and 2SA1189 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2853, 2SC2854 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC2853 2SC2854 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO 55V

5.30. 2sc2816.pdf Size:50K _hitachi

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.31. 2sc2898.pdf Size:50K _hitachi

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.32. 2sc2800.pdf Size:75K _mitsubishi

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5.33. 2sc2826.pdf Size:121K _mospec

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A A A

5.34. 2sc2834.pdf Size:67K _no

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5.35. 2sc2831a.pdf Size:69K _no

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5.36. 2sc2833.pdf Size:72K _no

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5.37. 2sc2832.pdf Size:75K _no

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5.38. 2sc2883.pdf Size:364K _secos

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2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 ? Low Voltage. 4 1 2 CLASSIFICATION OF hFE 3 A E C Product-Rank 2SC2883-O 2SC2883-Y Range 100~200 160~320 B D Marking GO GY F G H K J L PACKAGE INFORMATION Millimeter Millimeter REF. REF. Min

5.39. 2sc2873.pdf Size:218K _secos

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2SC2873 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low saturation voltage High speed switching time Complementary to 2SA1213 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V Millimeter Millimeter VCEO Collector-Emitter Voltage 50 V REF. REF. Min

5.40. 2sc2859.pdf Size:102K _secos

2SC2865A

2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES ? Excellent hFE Linearity A L ? Switching Applications 3 3 Top View C B 1 CLASSIFICATION OF hFE (1) 1 2 2 K E Product-Rank 2SC2859-O 2SC2859-Y 2SC2859-GR Range 70~140 120~240 200~400 D Marking WO

5.41. 2sc2893.pdf Size:14K _advanced-semi

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2SC2893 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2SC2893 is Designed for A use in UHF amplifiers up to 400 MHz. 4 5 C FEATURES: B E E POUT = 10.7 W Typical at 400 MHz B Omnigold Metallization System C D J E I F MAXIMUM RATINGS G IC 1.5 A H #8-32 UNC K MINIMUM MAXIMUM VCB 55 V DIM inches / mm inches

5.42. 2sc2830.pdf Size:143K _jmnic

2SC2865A
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JMnic Product Specification Silicon NPN Power Transistors 2SC2830 DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITION

5.43. 2sc2810.pdf Size:145K _jmnic

2SC2865A
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JMnic Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION · ·With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 5

5.44. 2sc2832.pdf Size:149K _jmnic

2SC2865A
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JMnic Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDI

5.45. 2sc2816.pdf Size:183K _jmnic

2SC2865A
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JMnic Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

5.46. 2sc2837.pdf Size:27K _sanken-ele

2SC2865A

LAPT 2SC2837 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 150 V ICBO VCB=150V 100max 0.1 A 9.6 2.0 VCEO 150 V A IEBO VEB=5V 100max VEBO

5.47. 2sc2833 2sc2833a.pdf Size:91K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2833 2SC2833A DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emi

5.48. 2sc2899.pdf Size:143K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage,high speed APPLICATIONS Ў¤ For high speed and high voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IN Collector-base voltage PA

5.49. 2sc2830.pdf Size:115K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2830 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For switching regulator applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SY

5.50. 2sc2809.pdf Size:142K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2809 DESCRIPTION ·With TO-3PN package ·High speed switching ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter

5.51. 2sc2877.pdf Size:120K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2877 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mount

5.52. 2sc2810.pdf Size:116K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,High speed APPLICATIONS Ў¤ For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER

5.53. 2sc2838.pdf Size:128K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2838 DESCRIPTION Ў¤ With MT-200 package Ў¤ Fast switching speed Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters application PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitt

5.54. 2sc2815.pdf Size:56K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2815 DESCRIPTION · ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolut maximum

5.55. 2sc2834 2sc2834a.pdf Size:119K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION Ў¤ With TO-3PN package Ў¤ High speed switching Ў¤ High VCBO Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTIO

5.56. 2sc2832 2sc2832a.pdf Size:118K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ High VCBO Ў¤ High speed switching APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) S

5.57. 2sc2827.pdf Size:56K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2827 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25?)

5.58. 2sc2837.pdf Size:152K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2837 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1186 APPLICATIONS Ў¤ For audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL

5.59. 2sc2816.pdf Size:149K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage Ў¤ High speed APPLICATIONS Ў¤ For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO V

5.60. 2sc2831 2sc2831a.pdf Size:59K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PA

5.61. 2sc2898.pdf Size:164K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2898 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,high speed Ў¤ High power switching Ў¤ PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base volt

5.62. 2sc2845.pdf Size:63K _inchange_semiconductor

2SC2865A
2SC2865A

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Volta

5.63. 2sc2841.pdf Size:88K _inchange_semiconductor

2SC2865A
2SC2865A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2841 DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter ABS

5.64. 2sc2881.pdf Size:335K _htsemi

2SC2865A

2SC2881 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Transition Frequency High Voltage 3. EMITTER Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO

5.65. 2sc2883.pdf Size:846K _htsemi

2SC2865A
2SC2865A

2SC2883 TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperatu

5.66. 2sc2884.pdf Size:335K _htsemi

2SC2865A

2SC2884 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR Complementary to 2SA1204 High DC Current Gain 3. EMITTER APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Coll

5.67. 2sc2873.pdf Size:407K _htsemi

2SC2865A

2SC2873 SOT- 89-3L TRANSISTOR (NPN) FEATURES 1. BASE ? Small Flat Package 2. COLLECTOR ? High Speed Switching Time ? Low Collector-emitter saturation voltage 3. EMITTER ? Complementary to 2SA1213 APPLICATIONS ? Power Amplifier and Switching MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Collector-Emitter

5.68. 2sc2859.pdf Size:452K _htsemi

2SC2865A

2 SC2859 TRANSISTOR (NPN) SOT–23 FEATURES ? Excellent hFE Linearity ? Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBO VCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 150 m

5.69. 2sc2839.pdf Size:273K _lge

2SC2865A
2SC2865A

2SC2839 TO-92S Transistor (NPN) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features High fT and small Cre(fT=320MHZ typ, Cre=0.95pF typ). MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 30 mA PC Collec

5.70. 2sc2883 sot-89.pdf Size:240K _lge

2SC2865A
2SC2865A

2SC2883 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 4.6 1 B 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 Low voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage VC

5.71. 2sc2881.pdf Size:193K _willas

2SC2865A
2SC2865A

WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES Small Flat Package 1. BASE High Transition Frequency High Voltage 2. COLLECTOR 3. EMITTER APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V Pb-Free package is ava

5.72. 2sc2881a.pdf Size:859K _blue-rocket-elect

2SC2865A
2SC2865A

2SC2881A(BR3DG2881AT) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 特征频率高,电压高,封装小, 与 2SA1201A(BR3CG1201AT)互补。 High fT, high VCEO, small flat package, complementary pair with 2SA1201A(BR3CG1201AT). 用途 / Applications 用于一

5.73. 2sc2882.pdf Size:960K _kexin

2SC2865A
2SC2865A

SMD Type Transistors NPN Transistors 2SC2882 ■ Features 1.70 0.1 ● Suitable for driver of 30 to 35 watts audio amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 ● Complementary to 2SA1202 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO

5.74. 2sc2881.pdf Size:818K _kexin

2SC2865A
2SC2865A

SMD Type Transistors NPN Transistors 2SC2881 ■ Features 1.70 0.1 ● Small Flat Package ● High Transition Frequency ● High Voltage 0.42 0.1 ● Complementary to 2SA1201 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Vol

5.75. 2sc2880.pdf Size:1000K _kexin

2SC2865A
2SC2865A

SMD Type Transistors NPN Transistors 2SC2880 1.70 0.1 ■ Features ● High Voltage:VCEO=150V ● High Transition Frequency ● Small Flat Package 0.42 0.1 0.46 0.1 ● Complementary to 2SA1200 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emitter

5.76. 2sc2883.pdf Size:944K _kexin

2SC2865A
2SC2865A

SMD Type Transistors NPN Transistors 2SC2883 ■ Features 1.70 0.1 ● Suitable for output stage of 3 watts amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 ● Complementary to 2SA1203 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30

5.77. 2sc2884.pdf Size:945K _kexin

2SC2865A
2SC2865A

SMD Type Transistors NPN Transistors 2SC2884 ■ Features 1.70 0.1 ● Suitable for output stage of 1 watts amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SA1204 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 C

5.78. 2sc2873.pdf Size:1009K _kexin

2SC2865A
2SC2865A

SMD Type Transistors NPN Transistors 2SC2873 ■ Features 1.70 0.1 ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage 0.42 0.1 ● Complementary to 2SA1213 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO

5.79. 2sc2845.pdf Size:345K _kexin

2SC2865A

SMD Type Transistors NPN Transistors 2SC2845 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=70mA 1 2 ● Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

5.80. 2sc2859.pdf Size:893K _kexin

2SC2865A
2SC2865A

SMD Type Transistors NPN Transistors 2SC2859 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Excellent hFE Linearity: hFE(2)=25(min) (VCE=6V,IC=400mA) 1 2 +0.05 -0.1 0.1 -0.01 ● Complementary to 2SA1182 0.95+0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

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