2SC2885 datasheet и подбор замены

 ..1. Size:128K  nec
 2sc2885 2sc2946.pdf 

DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are thr

 8.1. Size:146K  toshiba
 2sc2883.pdf 

2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO

 8.2. Size:145K  toshiba
 2sc2884.pdf 

2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit mm High DC current gain hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204 Maximum Ratings (Ta = 25 C) Characteristics Symbol

 8.3. Size:187K  toshiba
 2sc2880.pdf 

2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit mm High voltage VCEO = 150 V High transition frequency f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 8.4. Size:137K  toshiba
 2sc2882.pdf 

2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Unit mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1202 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 8.5. Size:145K  toshiba
 2sc2881.pdf 

2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit mm Power Amplifier Applications High voltage VCEO = 120 V High transition frequency fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25 C) Cha

 8.6. Size:428K  mcc
 2sc2883-o.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability

 8.7. Size:847K  mcc
 2sc2881-o 2sc2881-y.pdf 

2SC2881-O/2SC2881-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=1mA, IE=0 Collector-Base Breakdown Voltage 120 V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 120 V V(BR)EBO IE=1mA, IC=0 Emitter-Base Breakdown Voltage 5.0 V ICBO VCB=120V, IE=0 Collector-Base Cutoff Current 0.1 A IEBO VEB=5V, I

 8.8. Size:428K  mcc
 2sc2883-y.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability

 8.9. Size:231K  mcc
 2sc2881-y.pdf 

MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

 8.10. Size:231K  mcc
 2sc2881-o.pdf 

MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

 8.11. Size:364K  secos
 2sc2883.pdf 

2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 4 1 2 CLASSIFICATION OF hFE 3 A E C Product-Rank 2SC2883-O 2SC2883-Y Range 100 200 160 320 B D Marking GO GY F G H K J L PACKAGE INFORMATION Millimeter Millimeter REF. REF.

 8.12. Size:861K  jiangsu
 2sc2883.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5

 8.13. Size:139K  jiangsu
 2sc2884.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle

 8.14. Size:138K  jiangsu
 2sc2881.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2881 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Transition Frequency 3. EMITTER High Voltage Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol

 8.15. Size:846K  htsemi
 2sc2883.pdf 

2SC2883 TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp

 8.16. Size:335K  htsemi
 2sc2884.pdf 

2SC2884 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR Complementary to 2SA1204 High DC Current Gain 3. EMITTER APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC

 8.17. Size:335K  htsemi
 2sc2881.pdf 

2SC2881 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Transition Frequency High Voltage 3. EMITTER Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

 8.18. Size:1159K  lge
 2sc2884.pdf 

2SC2884 SOT-89-3L SOT-89-3L Plastic-Encapsulate NPN Transistors 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

 8.19. Size:240K  lge
 2sc2883 sot-89.pdf 

2SC2883 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 4.6 1 B 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 Low voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage

 8.20. Size:193K  willas
 2sc2881.pdf 

WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES Small Flat Package 1. BASE High Transition Frequency High Voltage 2. COLLECTOR 3. EMITTER APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V Pb-Free package i

 8.21. Size:859K  blue-rocket-elect
 2sc2881a.pdf 

 8.22. Size:883K  blue-rocket-elect
 2sc2881.pdf 

2SC2881 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , , 2SA1201 High fT, high VCEO, small flat package, complementary pair with 2SA1201. / Applications Power amplifier

 8.23. Size:944K  kexin
 2sc2883.pdf 

SMD Type Transistors NPN Transistors 2SC2883 Features 1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SA1203 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30

 8.24. Size:945K  kexin
 2sc2884.pdf 

SMD Type Transistors NPN Transistors 2SC2884 Features 1.70 0.1 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1204 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 C

 8.25. Size:1000K  kexin
 2sc2880.pdf 

SMD Type Transistors NPN Transistors 2SC2880 1.70 0.1 Features High Voltage VCEO=150V High Transition Frequency Small Flat Package 0.42 0.1 0.46 0.1 Complementary to 2SA1200 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emitter

 8.26. Size:960K  kexin
 2sc2882.pdf 

SMD Type Transistors NPN Transistors 2SC2882 Features 1.70 0.1 Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SA1202 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

 8.27. Size:818K  kexin
 2sc2881.pdf 

SMD Type Transistors NPN Transistors 2SC2881 Features 1.70 0.1 Small Flat Package High Transition Frequency High Voltage 0.42 0.1 Complementary to 2SA1201 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Vol

 8.28. Size:269K  cn shikues
 2sc2883o 2sc2883y.pdf 

2SC2883 NPN-General use transistor 1W 1.5A 30V Applications 4 Can be used for switching and amplifying in in various electrical and electronic equipments MAX RATINGS 1 2 3 parameters symbol rating unit SOT-89 collector-emitter voltage IB=0 VCEO 30 V collector-base voltage IE=0 VCBO 40 V 1 Base 2 Collector 3 Collector 3 Emitter emitter - base

 8.29. Size:340K  cn shikues
 2sc2881o 2sc2881y.pdf 

2SC2881 Voltage Amplifier Applications Voltage Amplifier Applications Features High Voltage VCEO = 120V High Transition Frequency fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 * Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristics Ta = 25 REV.08 1 of 2 2SC2881 hFE Classification

 8.30. Size:339K  cn shikues
 2sc2884y.pdf 

2SC2884Y NPN-General use transistor 1W 1.5A 25V Applications 4 Can be used for switching and amplifying in in various electrical and electronic equipments MAX RATINGS 1 2 3 parameters symbol rating unit SOT-89 collector-emitter voltage IB=0 VCEO 25 V collector-base voltage IE=0 VCBO 40 V 1 Base 2 Collector 3 Collector 3 Emitter emitter - bas