2SC2885 Datasheet. Specs and Replacement

Type Designator: 2SC2885  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 330 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 175 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO128

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2SC2885 datasheet

 ..1. Size:128K  nec

2sc2885 2sc2946.pdf pdf_icon

2SC2885

DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are thr... See More ⇒

 8.1. Size:146K  toshiba

2sc2883.pdf pdf_icon

2SC2885

2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO ... See More ⇒

 8.2. Size:145K  toshiba

2sc2884.pdf pdf_icon

2SC2885

2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit mm High DC current gain hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204 Maximum Ratings (Ta = 25 C) Characteristics Symbol... See More ⇒

 8.3. Size:187K  toshiba

2sc2880.pdf pdf_icon

2SC2885

2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit mm High voltage VCEO = 150 V High transition frequency f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit... See More ⇒

Detailed specifications: 2SC2881, 2SC2881O, 2SC2881Y, 2SC2882, 2SC2883, 2SC2883O, 2SC2883Y, 2SC2884, BC546, 2SC2886, 2SC2887, 2SC2888, 2SC2889, 2SC288A, 2SC289, 2SC2890, 2SC2891

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