Биполярный транзистор 2SC3034 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3034
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO3
2SC3034 Datasheet (PDF)
2sc3039.pdf
Ordering number:EN996BNPN Triple Diffused Planar Silicon Transistor2SC3039400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3039]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet
2sc3038.pdf
Ordering number:EN949BNPN Triple Diffused Planar Silicon Transistor2SC3038400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3038]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet
2sc3030.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc3032.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC3032DESCRIPTIONLow Collector Saturation VoltageLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose app
2sc3039.pdf
isc Silicon NPN Power Transistor 2SC3039DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sc3038.pdf
isc Silicon NPN Power Transistor 2SC3038DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050