2SC3034 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SC3034 Specs and Replacement

   Type Designator: 2SC3034
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

2SC3034 Substitution

- BJT ⓘ Cross-Reference Search

2SC3034 datasheet

8.1. Size:98K sanyo
2sc3039.pdf pdf_icon

Ordering number EN996B NPN Triple Diffused Planar Silicon Transistor 2SC3039 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3039] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Paramet... See More ⇒

8.2. Size:99K sanyo
2sc3038.pdf pdf_icon

Ordering number EN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3038] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Paramet... See More ⇒

8.3. Size:109K fuji
2sc3030.pdf pdf_icon

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

8.4. Size:189K inchange semiconductor
2sc3032.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC3032 DESCRIPTION Low Collector Saturation Voltage Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose app... See More ⇒