2SC3073O datasheet, аналоги, основные параметры
Наименование производителя: 2SC3073O 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 35 pf
Статический коэффициент передачи тока (hFE): 70
Корпус транзистора: DPAK
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Аналоги (замена) для 2SC3073O
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2SC3073O даташит
7.1. Size:232K toshiba
2sc3073.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.4. Size:213K toshiba
2sc3075.pdf 
2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Unit mm Applications DC-DC Converter Applications DC-AC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.5 s (max), (I = 0.5 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25
8.5. Size:183K toshiba
2sc3074.pdf 
2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time t = 1.0 s (typ) stg Complementary to 2SA1244 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Col
8.6. Size:190K toshiba
2sc3076.pdf 
2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) (I = 1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SA1241 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-
8.7. Size:184K toshiba
2sc3072.pdf 
2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C h = 70 (min) (V = 2 V, I = 4 A) FE CE C Low collector saturation voltage V = 1.0 V (max) (I = 4 A, I = 0.1 A) CE (sat) C B High power dissipa
8.8. Size:91K sanyo
2sc3070.pdf 
Ordering number EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006A [2SC3070] Features High DC current gain (hFE=800 to 3200). Large current capacity (IC=1.2A). Low collector-to-e
8.9. Size:84K sanyo
2sc3071.pdf 
Ordering number EN946G NPN Epitaxial Planar Silicon Transistor 2SC3071 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006B [2SC3071] Features High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector
8.10. Size:41K panasonic
2sc3077 e.pdf 
Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High power gain PG. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to
8.12. Size:1450K kexin
2sc3074.pdf 
DIP Type Transistors NPN Transistors 2SC3074 TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SA1244 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V
8.13. Size:201K inchange semiconductor
2sc3074.pdf 
isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr
8.14. Size:191K inchange semiconductor
2sc3074 v2.pdf 
isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-251(IPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr
8.15. Size:250K inchange semiconductor
2sc3076.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3076 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.5V (Max.)@ I = 1A CE(sat) C Complementary to 2SA1241 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier application Power switching application ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы: 2SC307, 2SC3070, 2SC3071, 2SC3072, 2SC3072A, 2SC3072B, 2SC3072C, 2SC3073, 2SC828, 2SC3073Y, 2SC3074, 2SC3074O, 2SC3074Y, 2SC3075, 2SC3076, 2SC3076O, 2SC3076Y
