2SC3155 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SC3155 Даташит. Аналоги

   Наименование производителя: 2SC3155
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 90 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 15 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO3

Аналог (замена) для 2SC3155

- подбор ⓘ биполярного транзистора по параметрам

2SC3155 Datasheet (PDF)

8.1. Size:102K sanyo
2sc3150.pdf pdf_icon

Ordering number:EN1069CNPN Triple Diffused Planar Silicon Transistor2SC3150800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3150]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame

8.2. Size:97K sanyo
2sc3151.pdf pdf_icon

Ordering number:EN1070CNPN Triple Diffused Planar Silicon Transistor2SC3151800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3151]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con

8.3. Size:102K sanyo
2sc3152.pdf pdf_icon

Ordering number:EN1071DNPN Triple Diffused Planar Silicon Transistor2SC3152800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3152]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

8.4. Size:54K sanyo
2sc3156.pdf pdf_icon

8.5. Size:97K sanyo
2sc3153.pdf pdf_icon

Ordering number:EN1072DNPN Triple Diffused Planar Silicon Transistor2SC3153800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3153]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

8.6. Size:221K jmnic
2sc3151.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb

8.7. Size:222K jmnic
2sc3152.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

8.8. Size:156K jmnic
2sc3157.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE

8.9. Size:144K jmnic
2sc3158.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

8.10. Size:217K jmnic
2sc3153.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

8.11. Size:142K jmnic
2sc3159.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

8.12. Size:346K lzg
2sc3150a.pdf pdf_icon

2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V

8.13. Size:174K cn sptech
2sc3150k 2sc3150l 2sc3150m.pdf pdf_icon

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBOV Collector-Emitter Voltage 800 V

8.14. Size:177K cn sptech
2sc3157m 2sc3157l 2sc3157k.pdf pdf_icon

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3157DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@I = 5ACE(sat) CFast Switching SpeedComplement to Type 2SA1261APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency pow

8.15. Size:216K inchange semiconductor
2sc3150.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

8.16. Size:202K inchange semiconductor
2sc3151.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3151DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

8.17. Size:202K inchange semiconductor
2sc3152.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3152DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

8.18. Size:200K inchange semiconductor
2sc3157.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3157DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@I = 5ACE(sat) CFast Switching SpeedComplement to Type 2SA1261Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching

8.19. Size:199K inchange semiconductor
2sc3158.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3158DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 3ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter and highfrequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

8.20. Size:190K inchange semiconductor
2sc3156.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3156DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

8.21. Size:202K inchange semiconductor
2sc3153.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3153DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

8.22. Size:195K inchange semiconductor
2sc3159.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3159DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 6ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter and highfrequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .