2SC3155 Specs and Replacement
Type Designator: 2SC3155
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SC3155 datasheet
8.1. Size:102K sanyo
2sc3150.pdf 
Ordering number EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3150] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame... See More ⇒
8.2. Size:97K sanyo
2sc3151.pdf
Ordering number EN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3151] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con... See More ⇒
8.3. Size:102K sanyo
2sc3152.pdf
Ordering number EN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3152] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi... See More ⇒
8.5. Size:97K sanyo
2sc3153.pdf
Ordering number EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3153] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi... See More ⇒
8.6. Size:221K jmnic
2sc3151.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb... See More ⇒
8.7. Size:222K jmnic
2sc3152.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol... See More ⇒
8.8. Size:156K jmnic
2sc3157.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE... See More ⇒
8.9. Size:144K jmnic
2sc3158.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO ... See More ⇒
8.10. Size:217K jmnic
2sc3153.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol... See More ⇒
8.11. Size:142K jmnic
2sc3159.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO ... See More ⇒
8.12. Size:346K lzg
2sc3150a.pdf
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR Purpose Switching regulator applications. Features High V , high speed switching, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1000 V CBO V 750 V ... See More ⇒
8.13. Size:174K cn sptech
2sc3150k 2sc3150l 2sc3150m.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 800 V... See More ⇒
8.14. Size:177K cn sptech
2sc3157m 2sc3157l 2sc3157k.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency pow... See More ⇒
8.15. Size:216K inchange semiconductor
2sc3150.pdf
isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
8.16. Size:202K inchange semiconductor
2sc3151.pdf
isc Silicon NPN Power Transistor 2SC3151 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE... See More ⇒
8.17. Size:202K inchange semiconductor
2sc3152.pdf
isc Silicon NPN Power Transistor 2SC3152 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE... See More ⇒
8.18. Size:200K inchange semiconductor
2sc3157.pdf
isc Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching ... See More ⇒
8.19. Size:199K inchange semiconductor
2sc3158.pdf
isc Silicon NPN Power Transistor 2SC3158 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 3A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
8.20. Size:190K inchange semiconductor
2sc3156.pdf
isc Silicon NPN Power Transistor 2SC3156 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.21. Size:202K inchange semiconductor
2sc3153.pdf
isc Silicon NPN Power Transistor 2SC3153 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE... See More ⇒
8.22. Size:195K inchange semiconductor
2sc3159.pdf
isc Silicon NPN Power Transistor 2SC3159 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 6A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Detailed specifications: 2SC3152K, 2SC3152L, 2SC3152M, 2SC3153, 2SC3153K, 2SC3153L, 2SC3153M, 2SC3154, BC337, 2SC3156, 2SC3157, 2SC3158O, 2SC3158R, 2SC3158Y, 2SC3159, 2SC315H, 2SC316
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