Биполярный транзистор 2SC3173 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3173
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 330 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO220
2SC3173 Datasheet (PDF)
2sc3176.pdf
Ordering number:EN1312BNPN Epitaxial Planar Silicon Transistor2SC3176CRT Horizontal Deflection OutputApplications (with Damper Diode)Features Package Dimensions Fast switching speed.unit:mm Especially suited for use in high-definition CRT2010Cdisplay (VCC=12 to 24V).[2SC3176] Wide ASO.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC463 : EmitterSpecifi
2sc3059 2sc3060 2sc3061 2sc3178.pdf
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2sc3170.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sc3179.pdf
2SC3179Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262)Application : Audio and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC3179 UnitSymbol 2SC3179 Symbol ConditionsUnit0.24.80.210.20.1VCBO 80 ICBO VCB=80V 100max A 2.0V100max AVCEO 60 IEBO VEB=6V
2sc3179.pdf
isc Silicon NPN Power Transistor 2SC3179DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 0.6V(Max.)@I = 2ACE(sat) CComplement to Type 2SA1262Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM
2sc3171.pdf
isc Silicon NPN Power Transistor 2SC3171DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
2sc3170.pdf
isc Silicon NPN Power Transistor 2SC3170DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
2sc3177.pdf
isc Silicon NPN Power Transistor 2SC3177DESCRIPTIONWith TO-126 packagingLow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSRelay driversHigh-speed invertersConvertersSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sc3175.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3175DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in high definitionCRT display(V =12 to 24V)CCABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
