2SC3182 - Даташиты. Аналоги. Основные параметры

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isc Silicon NPN Power Transistor 2SC3182 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1265 Minimum Lot-to-Lot variations for robust device performance and reliable operation] APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app

JMnic Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Ordering number EN1252C NPN Triple Diffused Planar Silicon Transistor 2SC3184 800V/0.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3184] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para

Ordering number EN1251A NPN Triple Diffused Planar Silicon Transistor 2SC3183 800V/0.2A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3183] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para

Transistor 2SC3187 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 300 V 1.27 1.27 Collector to emitter voltage VC

Transistor 2SC3187 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 300 V 1.27 1.27 Collector to emitter voltage VC

JMnic Product Specification Silicon NPN Power Transistors 2SC3180N DESCRIPTION With TO-3P(I) package Complement to type 2SA1263N APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3184 DESCRIPTION High breakdown voltage - VCBO 900V Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Switching Regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO

isc Silicon NPN Power Transistor 2SC3180 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1263 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage appl

isc Silicon NPN Power Transistor 2SC3180N DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1263N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage ap

isc Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage appl

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P