2SC3268 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3268 📄📄
Маркировка: ME
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 17 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.07 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 5000 MHz
Ёмкость коллекторного перехода (Cc): 1 pf
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: SOT89
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2SC3268 даташит
..1. Size:350K toshiba
2sc3268.pdf 
2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF UHF Band Low Noise Amplifier Applications Unit mm NF = 1.7dB, S21e 2 = 15.0dB (f = 500 MHz) NF = 2dB, S 2 = 9.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCEO 12 V Emitter-base vol
..2. Size:1289K kexin
2sc3268.pdf 
SMD Type Transistors NPN Transistors 2SC3268 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE
8.2. Size:189K toshiba
2sc3265.pdf 
2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE (1) = 100 320 Low saturation voltage V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol
8.3. Size:215K toshiba
2sc3266.pdf 
2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I = 2 A) C Complementary to 2SA1296 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20
8.4. Size:224K toshiba
2sc3267.pdf 
2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) @I = 2 A C Complementary to 2SA1297 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20
8.5. Size:322K mcc
2sc3265-o.pdf 
MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f
8.6. Size:322K mcc
2sc3265-y.pdf 
MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f
8.7. Size:28K sanken-ele
2sc3263.pdf 
LAPT 2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0 IEBO VCEO 230 V VEB=5V 100max
8.8. Size:28K sanken-ele
2sc3264.pdf 
LAPT 2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 230 ICBO VCB=230V 100max A V 0.2 24.4 2.1 0.1 2- 3.2 VCEO 230 IEBO VEB
8.9. Size:1544K jilin sino
2sc3264 2sa1295.pdf 
Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-PNP
8.10. Size:731K jilin sino
2sa1295 2sc3264.pdf 
Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-
8.11. Size:979K kexin
2sc3265.pdf 
SMD Type Transistors NPN Transistors 2SC3265 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC current gain Low saturation voltage 1 2 +0.1 Complementary to 2SA1298 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Coll
8.12. Size:613K umw-ic
2sc3265-o 2sc3265-y.pdf 
R UMW UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec
8.13. Size:1035K cn evvo
2sc3265-o 2sc3265-y.pdf 
2SC3265 SMD Ty p e Transistors NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector High DC current gain Simplified outline(SOT-23) Low saturation voltage Complementary to 2SA1298 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5
8.14. Size:216K inchange semiconductor
2sc3263.pdf 
isc Silicon NPN Power Transistor 2SC3263 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1294 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
8.15. Size:204K inchange semiconductor
2sc3264.pdf 
isc Silicon NPN Power Transistor 2SC3264 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1295 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
Другие транзисторы: 2SC3266, 2SC3266BL, 2SC3266GR, 2SC3266Y, 2SC3267, 2SC3267BL, 2SC3267GR, 2SC3267Y, 2N2907, 2SC3269, 2SC327, 2SC3270M, 2SC3271, 2SC3272, 2SC3273, 2SC3274, 2SC3275
