Справочник транзисторов. 2SC3277

 

Биполярный транзистор 2SC3277 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3277
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 90 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Ёмкость коллекторного перехода (Cc): 120 pf
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO247

 Аналоги (замена) для 2SC3277

 

 

2SC3277 Datasheet (PDF)

 ..1. Size:101K  sanyo
2sc3277.pdf

2SC3277
2SC3277

Ordering number:EN1207ANPN Triple Diffused Planar Silicon Transistor2SC3277400V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high current.unit:mm Wide ASO.2022A Fast switching speed.[2SC3277]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

 ..2. Size:202K  inchange semiconductor
2sc3277.pdf

2SC3277
2SC3277

isc Silicon NPN Power Transistor 2SC3277DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.1. Size:205K  toshiba
2sc3279.pdf

2SC3277
2SC3277

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = 1 V, I = 0.5 A) FE (1) CE C: h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage: V = 0.5 V (max) CE (sat)(I = 2 A, I = 5

 8.2. Size:94K  rohm
2sc3272.pdf

2SC3277
2SC3277

 8.3. Size:105K  rohm
2sc3270.pdf

2SC3277
2SC3277

 8.4. Size:61K  rohm
2sc3271f.pdf

2SC3277

2SC4061K / 2SC3415S / 2SC4015 / 2SC3271FTransistorsChroma Amplifier Transistor (300V, 0.1A)2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units: mm)1) High breakdown voltage. (BVCEO=300V)2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V)3) Ideal for chroma circuit.1.62.8(1) Emitter(Source)(2) Base(Gate)(3) Collector(Drain)0.3

 8.5. Size:269K  mcc
2sc3279-n.pdf

2SC3277
2SC3277

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

 8.6. Size:269K  mcc
2sc3279-m.pdf

2SC3277
2SC3277

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

 8.7. Size:269K  mcc
2sc3279-l.pdf

2SC3277
2SC3277

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

 8.8. Size:269K  mcc
2sc3279-p.pdf

2SC3277
2SC3277

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

 8.9. Size:289K  secos
2sc3279.pdf

2SC3277
2SC3277

2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC32

 8.10. Size:425K  jiangsu
2sc3279.pdf

2SC3277
2SC3277

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC3279 TRANSISTOR (NPN)TO-92 FEATURES High DC current gain and excellent hFE linearity1. EMITTER Low saturation voltage2. COLLECTOR3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal deviceZ Z=Ra

 8.11. Size:274K  lge
2sc3279 to-92.pdf

2SC3277
2SC3277

2SC3279(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE FeaturesHigh DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi

 8.12. Size:214K  foshan
2sc3279 3da3279.pdf

2SC3277
2SC3277

2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. : Features: High DC current gain and excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25) Symbol

 8.13. Size:196K  inchange semiconductor
2sc3272.pdf

2SC3277
2SC3277

isc Silicon NPN Power Transistor 2SC3272DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV chroma output and videosignal amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a

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