2SC3277M datasheet, аналоги, основные параметры
Наименование производителя: 2SC3277M 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 90 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Ёмкость коллекторного перехода (Cc): 120 pf
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO247
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Аналоги (замена) для 2SC3277M
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2SC3277M даташит
7.1. Size:101K sanyo
2sc3277.pdf 
Ordering number EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high current. unit mm Wide ASO. 2022A Fast switching speed. [2SC3277] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
7.2. Size:202K inchange semiconductor
2sc3277.pdf 
isc Silicon NPN Power Transistor 2SC3277 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.1. Size:205K toshiba
2sc3279.pdf 
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity h = 140 600 (V = 1 V, I = 0.5 A) FE (1) CE C h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage V = 0.5 V (max) CE (sat) (I = 2 A, I = 5
8.4. Size:61K rohm
2sc3271f.pdf 
2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Transistors Chroma Amplifier Transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0.3
8.5. Size:269K mcc
2sc3279-n.pdf 
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E
8.6. Size:269K mcc
2sc3279-m.pdf 
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E
8.7. Size:269K mcc
2sc3279-l.pdf 
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E
8.8. Size:269K mcc
2sc3279-p.pdf 
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E
8.9. Size:289K secos
2sc3279.pdf 
2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC32
8.10. Size:425K jiangsu
2sc3279.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR (NPN) TO-92 FEATURES High DC current gain and excellent hFE linearity 1. EMITTER Low saturation voltage 2. COLLECTOR 3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal device Z Z=Ra
8.11. Size:274K lge
2sc3279 to-92.pdf 
2SC3279(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi
8.12. Size:214K foshan
2sc3279 3da3279.pdf 
2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier applications. Features High DC current gain and excellent h linearity, low saturation voltage. FE /Absolute maximum ratings(Ta=25 ) Symbol
8.13. Size:196K inchange semiconductor
2sc3272.pdf 
isc Silicon NPN Power Transistor 2SC3272 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV chroma output and video signal amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Другие транзисторы: 2SC3271, 2SC3272, 2SC3273, 2SC3274, 2SC3275, 2SC3276, 2SC3277, 2SC3277L, D667, 2SC3277N, 2SC3278, 2SC3279, 2SC3279L, 2SC3279M, 2SC3279N, 2SC3279P, 2SC328
