2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit: mm Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: V = 0.4 V (max) CE (sat)(I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Maximum Ratings (Ta == 25C) ==Characteristics Symbol

2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF~UHF Band Low Noise Amplifier Applications Unit: mm NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) NF = 2dB, |S |2 = 9.5dB (f = 1000 MHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage VCEO 12 VEmitter-base vol

2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (I = 2 A) C Complementary to 2SA1296 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 20

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 1.0 s (max) t = 1.0 s (max), (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEOMaximum Ratings (Ta = 25C) Characteristics Symbol Rating

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = 1 V, I = 0.5 A) FE (1) CE C: h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage: V = 0.5 V (max) CE (sat)(I = 2 A, I = 5

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit: mm Switching Applications High hFE: h = 600~3600 FE High voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage V

2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) @I = 2 A C Complementary to 2SA1297 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 20

Ordering number:EN1200CPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit). Power amp (high power car stereo, motor controller)

Ordering number:EN1332ANPN Planar Type Silicon Darlington Transistor2SC3292For General-Purpose DriversApplications Package Dimensions Especially suited for use in switching of L loadunit:mmmotor driver, printer hammer driver, relay driver, etc.2010C[2SC3292]Features High DC current gain. Large current capacity and wide ASO. Contains 6010V Zener diode betw

Ordering number:EN1207ANPN Triple Diffused Planar Silicon Transistor2SC3277400V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high current.unit:mm Wide ASO.2022A Fast switching speed.[2SC3277]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

Ordering number:EN1201CPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit). Power amp (high power car stereo, motor controller

Ordering number:EN1333CNPN Planar Silicon Darlington Transistor2SC3293Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3293]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand b

Ordering number:EN1422CNPN Planar Silicon Transistor2SC3294Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3294]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand base. U

Ordering number:EN1199CPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit). Power amp (high power car stereo, motor controller)

Ordering number:EN2370PNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022 Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit). Power amp (high-power care stereo, motor control).

2SC4061K / 2SC3415S / 2SC4015 / 2SC3271FTransistorsChroma Amplifier Transistor (300V, 0.1A)2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units: mm)1) High breakdown voltage. (BVCEO=300V)2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V)3) Ideal for chroma circuit.1.62.8(1) Emitter(Source)(2) Base(Gate)(3) Collector(Drain)0.3

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

MCCTM Micro Commercial Components2SC3265-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3265-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E

MCCTM Micro Commercial Components2SC3265-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3265-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f

AAA

2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC32

2SC3280 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SA1301ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A Collec

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC3279 TRANSISTOR (NPN)TO-92 FEATURES High DC current gain and excellent hFE linearity1. EMITTER Low saturation voltage2. COLLECTOR3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal deviceZ Z=Ra

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC3243 TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25) 3. BASE Collector current ICM: 1 A Collector-base voltage 123 V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC3212

JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB

JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA

JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION With TO-3PFa package Low collector saturation voltage High breakdown voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION With TO-3PL package Complement to type 2SA1302 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

LAPT 2SC3263Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.1VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0IEBOVCEO 230 V VEB=5V 100max

LAPT 2SC3264Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 230 ICBO VCB=230V 100max AV0.224.42.10.12-3.2VCEO 230 IEBO VEB

LAPT 2SC3284Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-100(TO3P)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.80.415.60.1VCBO 150 ICBO VCB=150V 100max A 9.6 2.0VVCEO 150 IEBO VEB=5V 100max

2SC3279(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE FeaturesHigh DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEONPN-PNP Complementary NPN-PNP

Complementary NPN-PNP Power Bipolar Transistor R2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEO NPN-PNP Complementary NPN-

SMD Type TransistorsNPN Transistors 2SC3265SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High DC current gain Low saturation voltage1 2+0.1 Complementary to 2SA1298 +0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Coll

SMD Type TransistorsNPN Transistors2SC3268SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC3295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. : Features: High DC current gain and excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25) Symbol

RUMW UMW 2SC3265SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC3265 TRANSISTOR (NPN)FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collec

2SC3265 SMD Ty p e TransistorsNPN Transistors321.Base2.Emitter Features1 3.Collector High DC current gain Simplified outline(SOT-23) Low saturation voltage Complementary to 2SA1298 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5

isc Silicon NPN Power Transistor 2SC3263DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1294Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3235DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3280DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 8ACE(sat) CComplement to Type 2SA1301Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity au

isc Silicon NPN Power Transistor 2SC3211DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3254DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1290Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato

isc Silicon NPN Power Transistor 2SC3272DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV chroma output and videosignal amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC3277DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistors 2SC3298/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298A= 200V(Min)-2SC3298BComplement to Type 2SA1306/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

isc Silicon NPN Power Transistor 2SC3257DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SC3212DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3231DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min)(BR)CEOLarge Current CapabilityHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION With TO-3PFa package High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3255DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifi

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

isc Silicon NPN Power Transistor 2SC3258DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1293Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3299DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 50V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1307Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SC3296TDESCRIPTIONTCollector-Emitter Breakdown Voltage-: VB B= 150V(Min)(BR)CEOComplement to Type 2SA1304Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationTAPPLICATIONSTPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITVB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3250DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera

isc Silicon NPN Power Transistor 2SC3285DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 800V(Min)CEO(SUS)High Speed SwitchingGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SC3214DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedLarge safe operating areaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators,Motor controls,UltrasonicOscillators.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistors 2SC3298BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 200V(Min)(BR)CEOComplement to Type 2SA1306BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYM

isc Silicon NPN Power Transistor 2SC3252DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1288Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3229DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter andgeneral purpose applications.ABSOLUTE MAX

isc Silicon NPN Power Transistor 2SC3264DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1295Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SC3210DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3298 A BDESCRIPTIONWith TO-220F packagingComplement to Type 2SA1306 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC3298 160V Collector-Base Voltage 2

isc Silicon NPN Power Transistor 2SC3253DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1289Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC3298/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298AComplement to Type 2SA1306/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifie

isc Silicon NPN Power Transistor 2SC3281DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 3.0V(Max)@ I = 10A, I = 1ACE(sat) C BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fid

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA

isc Silicon NPN Power Transistor 2SC3230DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1276Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon NPN Power Transistor 2SC3256DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato

isc Silicon NPN Power Transistor 2SC3297DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1305Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio, car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(

isc Silicon NPN Power Transistor 2SC3223DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 10ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supply and general purpose poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3284DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1303Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU