2SC32A Specs and Replacement
Type Designator: 2SC32A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 165 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO39
2SC32A Substitution
- BJT ⓘ Cross-Reference Search
2SC32A datasheet
2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf 
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2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE (1) = 100 320 Low saturation voltage V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol ... See More ⇒
2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF UHF Band Low Noise Amplifier Applications Unit mm NF = 1.7dB, S21e 2 = 15.0dB (f = 500 MHz) NF = 2dB, S 2 = 9.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCEO 12 V Emitter-base vol... See More ⇒
2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I = 2 A) C Complementary to 2SA1296 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20... See More ⇒
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2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Unit mm Applications High Speed DC-DC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.0 s (max), (I = 0.8 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating... See More ⇒
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity h = 140 600 (V = 1 V, I = 0.5 A) FE (1) CE C h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage V = 0.5 V (max) CE (sat) (I = 2 A, I = 5... See More ⇒
2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit mm Switching Applications High hFE h = 600 3600 FE High voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage V... See More ⇒
2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) @I = 2 A C Complementary to 2SA1297 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 ... See More ⇒
Ordering number EN1200C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1290/2SC3254 60V/7A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010B Inverters, converters (strobo, flash, fluorescent lamp [2SA1290/2SC3254] lighting circuit). Power amp (high power car stereo, motor controller)... See More ⇒
Ordering number EN1332A NPN Planar Type Silicon Darlington Transistor 2SC3292 For General-Purpose Drivers Applications Package Dimensions Especially suited for use in switching of L load unit mm motor driver, printer hammer driver, relay driver, etc. 2010C [2SC3292] Features High DC current gain. Large current capacity and wide ASO. Contains 60 10V Zener diode betw... See More ⇒
Ordering number EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high current. unit mm Wide ASO. 2022A Fast switching speed. [2SC3277] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi... See More ⇒
Ordering number EN1201C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010B Inverters, converters (strobo, flash, fluorescent lamp [2SA1291/2SC3255] lighting circuit). Power amp (high power car stereo, motor controller... See More ⇒
Ordering number EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3293] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and b... See More ⇒
Ordering number EN1422C NPN Planar Silicon Transistor 2SC3294 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3294] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and base. U... See More ⇒
Ordering number EN1199C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1289/2SC3253 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010B Inverters, converters (strobo, flash, fluorescent lamp [2SA1289/2SC3253] lighting circuit). Power amp (high power car stereo, motor controller)... See More ⇒
Ordering number EN2370 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1292/2SC3256 60V/15A High-Speed Switching Applications Applications Package Dimensions Various inductance, lamp drivers for electrical unit mm equipment. 2022 Inverters, converters (strobo, flash, fluorescent lamp [2SA1292/2SC3256] lighting circuit). Power amp (high-power care stereo, motor control). ... See More ⇒
2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Transistors Chroma Amplifier Transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0.3... See More ⇒
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒
MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f... See More ⇒
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒
2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒
MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f... See More ⇒
2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC32... See More ⇒
2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A Collec... See More ⇒
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR (NPN) TO-92 FEATURES High DC current gain and excellent hFE linearity 1. EMITTER Low saturation voltage 2. COLLECTOR 3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal device Z Z=Ra... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC3243 TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM 0.9 W (Tamb=25 ) 3. BASE Collector current ICM 1 A Collector-base voltage 123 V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3212... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION With TO-3PFa package Low collector saturation voltage High breakdown voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage ... See More ⇒
Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION With TO-3PL package Complement to type 2SA1302 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage... See More ⇒
LAPT 2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0 IEBO VCEO 230 V VEB=5V 100max ... See More ⇒
LAPT 2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 230 ICBO VCB=230V 100max A V 0.2 24.4 2.1 0.1 2- 3.2 VCEO 230 IEBO VEB... See More ⇒
LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-100(TO3P) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 150 ICBO VCB=150V 100max A 9.6 2.0 V VCEO 150 IEBO VEB=5V 100max ... See More ⇒
2SC3279(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi... See More ⇒
Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-PNP... See More ⇒
Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-... See More ⇒
SMD Type Transistors NPN Transistors 2SC3265 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC current gain Low saturation voltage 1 2 +0.1 Complementary to 2SA1298 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Coll... See More ⇒
SMD Type Transistors NPN Transistors 2SC3268 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE... See More ⇒
SMD Type Transistors NPN Transistors 2SC3295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle... See More ⇒
2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier applications. Features High DC current gain and excellent h linearity, low saturation voltage. FE /Absolute maximum ratings(Ta=25 ) Symbol... See More ⇒
R UMW UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec... See More ⇒
2SC3265 SMD Ty p e Transistors NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector High DC current gain Simplified outline(SOT-23) Low saturation voltage Complementary to 2SA1298 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5... See More ⇒
isc Silicon NPN Power Transistor 2SC3263 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1294 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3235 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
isc Silicon NPN Power Transistor 2SC3280 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 8A CE(sat) C Complement to Type 2SA1301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity au... See More ⇒
isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒
isc Silicon NPN Power Transistor 2SC3254 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1290 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato... See More ⇒
isc Silicon NPN Power Transistor 2SC3272 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV chroma output and video signal amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
isc Silicon NPN Power Transistor 2SC3277 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B Complement to Type 2SA1306/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplif... See More ⇒
isc Silicon NPN Power Transistor 2SC3257 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
isc Silicon NPN Power Transistor 2SC3212 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒
isc Silicon NPN Power Transistor 2SC3231 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Large Current Capability High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION With TO-3PFa package High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3255 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1291 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifi... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
isc Silicon NPN Power Transistor 2SC3258 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max.)@ I = 3A CE(sat) C High Switching Speed Complement to Type 2SA1293 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3299 DESCRIPTION Collector-Emitter Breakdown Voltage V = 50V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1307 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT Collector-Emitter Breakdown Voltage- VB B= 150V(Min) (BR)CEO Complement to Type 2SA1304 Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT VB ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3250 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 300V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and genera... See More ⇒
isc Silicon NPN Power Transistor 2SC3285 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Speed Switching Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
isc Silicon NPN Power Transistor 2SC3214 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Large safe operating area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators,Motor controls,Ultrasonic Oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
isc Silicon NPN Power Transistors 2SC3298B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA1306B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYM... See More ⇒
isc Silicon NPN Power Transistor 2SC3252 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1288 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3229 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAX... See More ⇒
isc Silicon NPN Power Transistor 2SC3264 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1295 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
isc Silicon NPN Power Transistor 2SC3210 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒
isc Silicon NPN Power Transistor 2SC3298 A B DESCRIPTION With TO-220F packaging Complement to Type 2SA1306 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SC3298 160 V Collector-Base Voltage 2... See More ⇒
isc Silicon NPN Power Transistor 2SC3253 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1289 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3298/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A Complement to Type 2SA1306/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifie... See More ⇒
isc Silicon NPN Power Transistor 2SC3281 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fid... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA... See More ⇒
isc Silicon NPN Power Transistor 2SC3230 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1276 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒
isc Silicon NPN Power Transistor 2SC3256 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1292 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato... See More ⇒
isc Silicon NPN Power Transistor 2SC3297 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1305 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Car radio, car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
isc Silicon NPN Power Transistor 2SC3223 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 10A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supply and general purpose power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
isc Silicon NPN Power Transistor 2SC3284 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1303 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
Detailed specifications: 2SC3296 , 2SC3297 , 2SC3298 , 2SC3298O , 2SC3298Y , 2SC3299 , 2SC3299O , 2SC3299Y , 2SC4793 , 2SC32M , 2SC33 , 2SC330 , 2SC3300 , 2SC3301 , 2SC3302 , 2SC3303 , 2SC3303O .
History: 2SC1079 | WNT2F04 | 2SD678 | 2N861 | 2SB1184R | 2SB1182Q | 2SD679A
Keywords - 2SC32A pdf specs
2SC32A cross reference
2SC32A equivalent finder
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2SC32A substitution
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History: 2SC1079 | WNT2F04 | 2SD678 | 2N861 | 2SB1184R | 2SB1182Q | 2SD679A
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