Справочник транзисторов. 2SC3318

 

Биполярный транзистор 2SC3318 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3318

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 500 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 45

Корпус транзистора: TO218

Аналоги (замена) для 2SC3318

 

 

2SC3318 Datasheet (PDF)

1.1. 2sc3318.pdf Size:216K _fuji

2SC3318
2SC3318

FUJI POWER TRANSISTOR 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters JEDEC - General purpose power amplifiers EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unle

1.2. 2sc3318.pdf Size:178K _inchange_semiconductor

2SC3318
2SC3318

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3318 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage ,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DES

 4.1. 2sc3310.pdf Size:44K _toshiba

2SC3318

 This Material Copyrighted By Its Respective Manufacturer

4.2. 2sc3315.pdf Size:44K _panasonic

2SC3318
2SC3318

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 1.27

 4.3. 2sc3314.pdf Size:45K _panasonic

2SC3318
2SC3318

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to bas

4.4. 2sc3312.pdf Size:37K _panasonic

2SC3318
2SC3318

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter v

 4.5. 2sc3313.pdf Size:37K _panasonic

2SC3318
2SC3318

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20

4.6. 2sc3312 e.pdf Size:41K _panasonic

2SC3318
2SC3318

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter v

4.7. 2sc3315 e.pdf Size:48K _panasonic

2SC3318
2SC3318

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 1.27

4.8. 2sc3311a e.pdf Size:40K _panasonic

2SC3318
2SC3318

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base

4.9. 2sc3314 e.pdf Size:49K _panasonic

2SC3318
2SC3318

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to bas

4.10. 2sc3311.pdf Size:36K _panasonic

2SC3318
2SC3318

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base

4.11. 2sc3313 e.pdf Size:40K _panasonic

2SC3318
2SC3318

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20

4.12. 2sc3311a.pdf Size:110K _jiangsu

2SC3318

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Vo

4.13. 2sc3310.pdf Size:179K _inchange_semiconductor

2SC3318
2SC3318

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3310 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High collector breakdown voltage Ў¤ Excellent Switching times APPLICATIONS Ў¤ Switching regulator Ў¤ High speed DC-DC converter Ў¤ High voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Ў¤ Absolute maximum ratings(Ta=25Ўж

4.14. 2sc3317.pdf Size:179K _inchange_semiconductor

2SC3318
2SC3318

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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