2SC3318 Datasheet and Replacement

FUJI POWER TRANSISTOR2SC3318TRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsHigh frequency invertersJEDEC -General purpose power amplifiers EIAJ SC-65Maximum ratings and characteristicsAbsolute maximum ratings (Tc=25C

isc Silicon NPN Power Transistor 2SC3318DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

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Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE

Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V

Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t

Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to

Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit

Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE

Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to

Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V

Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit

Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Vo

isc Silicon NPN Power Transistor 2SC3317DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC3310DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a