2SC3362 - описание и поиск аналогов

Ordering number EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2018A Small-sized package permitting the 2SA1331/ [2SA1331/2SC3361] 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit C Collector B Base (Fo

2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 10 A Collector

SMD Type Transistors NPN Transistors 2SC3361 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Fast switching speed. 1 2 High breakdown voltage. +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1331 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60

SMD Type Transistors NPN Transistors 2SC3360 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO=200V 1 2 High DC Current Gain hFE=90 to 450 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complementary to 2SA1330 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

isc Silicon NPN Power Transistor 2SC3365 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT