2SC3362 Specs and Replacement
Type Designator: 2SC3362
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO218
2SC3362 Substitution
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2SC3362 datasheet
Ordering number EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2018A Small-sized package permitting the 2SA1331/ [2SA1331/2SC3361] 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit C Collector B Base (Fo... See More ⇒
2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 10 A Collector... See More ⇒
Detailed specifications: 2SC3358, 2SC3359, 2SC336, 2SC3360, 2SC3361, 2SC3361S4, 2SC3361S5, 2SC3361S6, TIP35C, 2SC3363, 2SC3364, 2SC3365, 2SC3366, 2SC3367, 2SC3368, 2SC3369, 2SC337
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