2SC3497 - описание и поиск аналогов

Ordering number EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF amplifier, various driver, muting circuit. unit mm 2003A Features [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-

Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit mm 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO 0 to 0.4 Satisfactory linearity of forward current transfer ratio hFE R = 0.5 0.8 0.1 N type package enabling direct soldering of the radiatin

2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temp

SMD Type SMD Type SMD Type SMD Type SMD Type Transistors SMD Type Transistors Product specification 2SC3496A TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High-speed switching High collector-base voltage (Emitter open) VCBO 0.127 +0.1 max 0.80-0.1 Satisfactory linearity of forward current transfer ratio hFE +0.1 2.3 0.60-0.1 1 Base +0