2SC3497 Specs and Replacement
Type Designator: 2SC3497
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220
2SC3497 Substitution
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2SC3497 datasheet
Ordering number EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF amplifier, various driver, muting circuit. unit mm 2003A Features [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-... See More ⇒
Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit mm 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO 0 to 0.4 Satisfactory linearity of forward current transfer ratio hFE R = 0.5 0.8 0.1 N type package enabling direct soldering of the radiatin... See More ⇒
2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temp... See More ⇒
Detailed specifications: 2SC349, 2SC3490, 2SC3491, 2SC3492, 2SC3493, 2SC3494, 2SC3495, 2SC3496, 2SC5200, 2SC3498, 2SC3499, 2SC35, 2SC350, 2SC3500, 2SC3501, 2SC3502, 2SC3502C
Keywords - 2SC3497 pdf specs
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