2SC3507 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3507 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TOP3
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Аналоги (замена) для 2SC3507
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2SC3507 даташит
..1. Size:60K panasonic
2sc3507.pdf 
Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0.2
..2. Size:182K jmnic
2sc3507.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM
..3. Size:219K inchange semiconductor
2sc3507.pdf 
isc Silicon NPN Power Transistor 2SC3507 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.1. Size:284K 1
2sc3509.pdf 
/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o
8.3. Size:48K sanyo
2sc3504.pdf 
Ordering number EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2006A [2SC3504] B Base EIAJ SC-51 C Collector E Emitter SANYO MP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating
8.4. Size:157K sanyo
2sc3502.pdf 
Ordering number EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio
8.5. Size:158K sanyo
2sa1381 2sc3503.pdf 
Ordering number EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 300V. unit mm Small reverse transfer capacitance and excellent high 2009A frequency characteristic [2SA1381/2SC3503] Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of
8.6. Size:153K fairchild semi
ksc3503 2sc3503.pdf 
March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage VCEO= 300V Low Reverse Transfer Capacitance Cre= 1.8pF at VCB = 30V TO-126 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequency
8.7. Size:242K onsemi
2sc3503 ksc3503.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.8. Size:59K panasonic
2sc3506.pdf 
Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 Absolute Maximum Rating
8.9. Size:109K fuji
2sc3505.pdf 
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.11. Size:180K jmnic
2sc3506.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM
8.12. Size:150K jmnic
2sc3505.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION With TO-3PN package High voltage ,high reliability High speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified
8.13. Size:218K foshan
2sc3502 3da3502.pdf 
2SC3502(3DA3502) NPN /SILICON NPN TRANSISTOR CRT Purpose Ultrahigh-definition CRT display, video output applications. , , Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maxim
8.14. Size:195K inchange semiconductor
2sc3506.pdf 
isc Silicon NPN Power Transistor 2SC3506 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-B
8.15. Size:195K inchange semiconductor
2sc3502.pdf 
isc Silicon NPN Power Transistor 2SC3502 DESCRIPTION Collector Emitter Breakdown Voltage V = 200 V (BR)CEO Complement to Type 2SA1380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.16. Size:199K inchange semiconductor
2sc3505.pdf 
isc Silicon NPN Power Transistor 2SC3505 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 700V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
Другие транзисторы: 2SC3503D, 2SC3503E, 2SC3503F, 2SC3504, 2SC3504D, 2SC3504E, 2SC3504F, 2SC3505, BC557, 2SC3508, 2SC3509, 2SC350A, 2SC350B, 2SC350H, 2SC351, 2SC3510, 2SC3511
