2SC3518 datasheet и подбор замены

 ..1. Size:236K  nec
 2sc3518-z 2sc3518.pdf 

 ..2. Size:242K  inchange semiconductor
 2sc3518.pdf 

isc Silicon NPN Power Transistor 2SC3518 DESCRIPTION Low collector saturation voltage High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 0.1. Size:1205K  kexin
 2sc3518-z.pdf 

SMD Type Transistors NPN Transistors 2SC3518-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High DC current gain Low saturation voltage 0.127 Complementary to 2SA1385-Z +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbo

 0.2. Size:217K  inchange semiconductor
 2sc3518-z.pdf 

isc Silicon NPN Power Transistor 2SC3518-Z DESCRIPTION Low collector saturation voltage High DC current gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.1. Size:225K  toshiba
 2sc3515.pdf 

2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacitance C = 3 pF (typ.)

 8.2. Size:28K  hitachi
 2sc3513.pdf 

2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC3513 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction t

 8.3. Size:28K  hitachi
 2sc3512.pdf 

2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 600 mW Junct

 8.4. Size:45K  hitachi
 2sc3127 2sc3128 2sc3510.pdf 

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 1. Emitter 2. Base 2 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC3127*1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector t

 8.5. Size:138K  mospec
 2sc3519a.pdf 

A A A

 8.6. Size:33K  no
 2sa1383 2sa1383 2sc3514.pdf 

 8.7. Size:28K  sanken-ele
 2sc3519.pdf 

LAPT 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SC3519 2SC3519A 2SC3519 2SC3519A 0.2 4.8 0.4 15.6 VCBO 0.1 160 180 V 100max A 9.6

 8.8. Size:217K  nell
 2sc3519b-a.pdf 

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

 8.9. Size:217K  nell
 2sc3519b.pdf 

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

 8.10. Size:1234K  kexin
 2sc3515.pdf 

SMD Type Transistors NPN Transistors 2SC3515 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

 8.11. Size:889K  kexin
 2sc3513.pdf 

SMD Type Transistors NPN Transistors 2SC3513 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

 8.12. Size:203K  inchange semiconductor
 2sc3519 2sc3519a.pdf 

isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3519 (BR)CEO = 180V(Min)-2SC3519A Good Linearity of h FE Complement to Type 2SA1386/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25

 8.13. Size:176K  inchange semiconductor
 2sc3512.pdf 

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3512 DESCRIPTION Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF UHF band. ABSOLUTE MAXIMUM RATIN

 8.14. Size:238K  inchange semiconductor
 2sc3519 a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U

 8.15. Size:198K  inchange semiconductor
 2sc3514.pdf 

isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect