2SC3528 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SC3528 DESCRIPTION Low Collector Saturation Voltage High Collector Current Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 DESCRIPTION With TO-3PFa package High collector current Low saturation voltage APPLICATIONS For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS V

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V +0.2 +0.2 Collector to emitter voltage VCER* 100

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V +0.2 +0.2 Collector to emitter voltage VCER* 100

isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION Low Collector Saturation Voltage High Collector Current Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll