Биполярный транзистор 2SC3546 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3546
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 120 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 135 °C
Граничная частота коэффициента передачи тока (ft): 30 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: MT-200
2SC3546 Datasheet (PDF)
2sc3547a.pdf
2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
2sc3547b.pdf
2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
2sc3545.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3545UHF OSCILLATOR AND MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3545 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillator and mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any change of th
2sc3545 2sc4184 ne94430 ne94433.pdf
NPN SILICON NE944OSCILLATOR AND MIXER TRANSISTOR SERIESDESCRIPTIONFEATURESThe NE944 series of NPN silicon epitaxial bipolar transistors LOW COSTis intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT:mixer applications. It is suitable for automotive keyless entryfT = 2000 MHz TYPand TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN
2sc3549.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc3545.pdf
SMD Type TransistorsNPN Transistors2SC3545SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc3547a.pdf
SMD Type TransistorsNPN Transistors2SC3547ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc3545.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3545DESCRIPTIONLow Base Time Constant;r = 4 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = -5mA, V = 10VE CELow Feedback Capacitance;C = 0.48 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for
2sc3540.pdf
isc Silicon NPN Power Transistor 2SC3540DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CComplement to Type 2SA1388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo
2sc3549.pdf
isc Silicon NPN Power Transistors 2SC3549DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolids state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sc3544.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3544DESCRIPTIONLow Base Time Constant;r = 5 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = 5mA, V = 10VE CELow Feedback Capacitance;C = 0.55 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for u
2sc3547.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3547DESCRIPTIONHigh Current-GainBandwidth Productf = 4 GHz TYP. @ V = 10 V,I = 5 mAT CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner, UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050