Биполярный транзистор 2SC3562 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3562
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO220
2SC3562 Datasheet (PDF)
2sc3569.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3569NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
2sc3566.pdf
isc Silicon NPN Power Transistor 2SC3566DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM
2sc3565.pdf
isc Silicon NPN Power Transistor 2SC3565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI
2sc3561.pdf
isc Silicon NPN Power Transistor 2SC3561DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc3569.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3569DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3568.pdf
isc Silicon NPN Power Transistor 2SC3568DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1396Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sc3563.pdf
isc Silicon NPN Power Transistor 2SC3563DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050