2SC3562 Specs and Replacement
Type Designator: 2SC3562
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SC3562 datasheet
8.2. Size:128K nec
2sc3569.pdf 
DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do... See More ⇒
8.4. Size:203K inchange semiconductor
2sc3566.pdf
isc Silicon NPN Power Transistor 2SC3566 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM... See More ⇒
8.5. Size:191K inchange semiconductor
2sc3565.pdf
isc Silicon NPN Power Transistor 2SC3565 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATI... See More ⇒
8.6. Size:195K inchange semiconductor
2sc3561.pdf
isc Silicon NPN Power Transistor 2SC3561 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
8.7. Size:190K inchange semiconductor
2sc3569.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3569 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
8.8. Size:203K inchange semiconductor
2sc3568.pdf
isc Silicon NPN Power Transistor 2SC3568 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1396 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
8.9. Size:195K inchange semiconductor
2sc3563.pdf
isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
Detailed specifications: 2SC3555, 2SC3556, 2SC3557, 2SC3558, 2SC3559, 2SC356, 2SC3560, 2SC3561, A42, 2SC3563, 2SC3564, 2SC3565, 2SC3566, 2SC3567, 2SC3568, 2SC3569, 2SC3570
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