Биполярный транзистор 2SC3626 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3626
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора: TO220
2SC3626 Datasheet (PDF)
2sc3626.pdf
isc Silicon NPN Power Transistor 2SC3626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc3623 2sc3623a.pdf
DATA SHEETSILICON TRANSISTORS2SC3623, 3623ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3623)VEBO: 15 V (2SC3623A)ABSOLUTE MAXIMUM RATINGS (Ta = 25C
2sc3622 2sc3622a.pdf
DATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOWFREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3622)VEBO: 15 V (2SC3622A)ABSOLUTE MAXIMUM RATINGS (Ta = 25
2sc3624.pdf
SMD Type TransistorsNPN Transistors2SC3624SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll
2sc3624a.pdf
SMD Type TransistorsNPN Transistors2SC3624ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col
2sc3627.pdf
isc Silicon NPN Power Transistor 2SC3627DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc3621.pdf
isc Silicon NPN Power Transistor 2SC3621DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageComplementary to 2SA1408100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV vert.deflection output applicationColor TV class B sound output applicationABSOLUTE MAXIMUM RATINGS(T =25)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
