2SC3626 Specs and Replacement
Type Designator: 2SC3626
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO220
2SC3626 Substitution
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2SC3626 datasheet
isc Silicon NPN Power Transistor 2SC3626 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High hFE hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat) VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO VEBO 12 V (2SC3623) VEBO 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C... See More ⇒
Detailed specifications: 2SC3621, 2SC3622, 2SC3622A, 2SC3623, 2SC3623A, 2SC3624, 2SC3624A, 2SC3625, MJE350, 2SC3627, 2SC3628, 2SC3629, 2SC363, 2SC3630, 2SC3631, 2SC3632, 2SC3633
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History: 2PC4617Q | 2SC4603R | 2SC940 | NJD1718 | BCW68RF | NJVMJD50T4G | FCS9012G
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