Биполярный транзистор 2SC3660 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3660
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 105 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимальный постоянный ток коллектора (Ic): 24 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 620 MHz
Статический коэффициент передачи тока (hfe): 10
2SC3660 Datasheet (PDF)
2sc3664.pdf
Ordering number:EN2488NPN Triple Diffused Planar Type Darlington Silicon Transistor2SC3664400V/20A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage, high power switching.2022A[2SC3664]Features Fast speed (adoption of MBIT process). High breakdown voltage (VCBO=800V). High reliability (adoption of HVP process).
2sc3661.pdf
Ordering number:EN1854ANPN Epitaxial Planar Silicon Transistor2SC3661High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuit.2018A[2SC3661]Features Very small-sized package permitting 2SC3661-usedsets to be made smaller, slimmer. Adoption of FBET proc
2sc3663.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3663NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS (in mm) Low-voltage, low-current, low-noise and high-gain2.8 0.2NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz+0.11.5 0.650.15GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz Ideal for battery driv
2sc3669.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT
2sc3663.pdf
SMD Type TransistorsNPN Transistors2SC3663SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=5mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc3661.pdf
SMD Type TransistorsNPN Transistors2SC3661SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050