2SC3660 Datasheet and Replacement

   Type Designator: 2SC3660
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 105 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector Current |Ic max|: 24 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 620 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -

2SC3660 Substitution

- BJT Cross-Reference Search

2SC3660 Datasheet (PDF)

8.1. Size:175K toshiba
2sc3666.pdf pdf_icon

8.2. Size:217K toshiba
2sc3668.pdf pdf_icon

8.3. Size:192K toshiba
2sc3669.pdf pdf_icon

8.4. Size:175K toshiba
2sc3665.pdf pdf_icon

8.5. Size:33K sanyo
2sc3664.pdf pdf_icon

Ordering number:EN2488NPN Triple Diffused Planar Type Darlington Silicon Transistor2SC3664400V/20A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage, high power switching.2022A[2SC3664]Features Fast speed (adoption of MBIT process). High breakdown voltage (VCBO=800V). High reliability (adoption of HVP process).

8.6. Size:87K sanyo
2sc3661.pdf pdf_icon

Ordering number:EN1854ANPN Epitaxial Planar Silicon Transistor2SC3661High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuit.2018A[2SC3661]Features Very small-sized package permitting 2SC3661-usedsets to be made smaller, slimmer. Adoption of FBET proc

8.7. Size:110K nec
2sc3663.pdf pdf_icon

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3663NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS (in mm) Low-voltage, low-current, low-noise and high-gain2.8 0.2NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz+0.11.5 0.650.15GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz Ideal for battery driv

8.8. Size:270K utc
2sc3669.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT

8.9. Size:1389K kexin
2sc3663.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC3663SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=5mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

8.10. Size:947K kexin
2sc3661.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC3661SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .