Биполярный транзистор 2SC3822 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3822
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SC67
2SC3822 Datasheet (PDF)
2sc3822.pdf
isc Silicon NPN Power Transistor 2SC3822DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertersSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS
2sc3820.pdf
Ordering number:EN2544BNPN Epitaxial Planar Type Silicon Transistor2SC3820High hFE, AF Amplifier ApplicationsApplications Package Dimensions Drivers, muting circuits. unit:mm2033Features [2SC3820] Adoption of FBET and MBIT processes. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat) 0.5V). High VEBO (VEBO 15
2sc3829.pdf
Transistor2SC3829Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi
2sc3824.pdf
Power Transistors2SC3824, 2SC3824ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm7.00.33.50.23.00.2 0 to 0.152.00.2 Features High-speed switching High collector-base voltage (Emitter open) VCBO I type package enabling direct soldering of the radiating fin to theprinted circuit board, etc. of small
2sc3829 e.pdf
Transistor2SC3829Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi
2sc3829.pdf
SMD Type TransistorsNPN Transistors2SC3829SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect
2sc3821.pdf
isc Silicon NPN Power Transistor 2SC3821DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050