2SC3822 Datasheet and Replacement

isc Silicon NPN Power Transistor 2SC3822DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertersSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS

Ordering number:EN2544BNPN Epitaxial Planar Type Silicon Transistor2SC3820High hFE, AF Amplifier ApplicationsApplications Package Dimensions Drivers, muting circuits. unit:mm2033Features [2SC3820] Adoption of FBET and MBIT processes. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat) 0.5V). High VEBO (VEBO 15

Transistor2SC3829Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

Power Transistors2SC3824, 2SC3824ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm7.00.33.50.23.00.2 0 to 0.152.00.2 Features High-speed switching High collector-base voltage (Emitter open) VCBO I type package enabling direct soldering of the radiating fin to theprinted circuit board, etc. of small

Transistor2SC3829Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

SMD Type TransistorsNPN Transistors2SC3829SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

isc Silicon NPN Power Transistor 2SC3821DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T