2SC3867 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3867 📄📄
Маркировка: DI-
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 100 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3800 MHz
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO236
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Аналоги (замена) для 2SC3867
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2SC3867 даташит
..1. Size:27K hitachi
2sc3867.pdf 
2SC3867 Silicon NPN Epitaxial Application UHF frequency converter Wide band amplifier Outline MPAK 3 1 1. Base 2. Emitter 2 3. Collector 2SC3867 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipatio
..2. Size:808K kexin
2sc3867.pdf 
SMD Type Transistors NPN Transistors 2SC3867 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
8.3. Size:319K toshiba
2sc3862.pdf 
2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications Unit mm VHF UHF Band RF Amplifier Applications Exchange of emitter for base in 2SC3120 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector
8.5. Size:51K panasonic
2sc3869.pdf 
Power Transistors 2SC3869 Silicon NPN triple diffusion planar type For high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with 1.3
8.6. Size:59K panasonic
2sc3868.pdf 
Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Abso
8.9. Size:62K jmnic
2sc3866.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage- V(BR)CBO= 900V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Coll
8.10. Size:152K jmnic
2sc3868.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3868 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open
8.11. Size:914K kexin
2sc3862.pdf 
SMD Type Transistors NPN Transistors 2SC3862 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collecto
8.12. Size:736K kexin
2sc3863.pdf 
SMD Type Transistors NPN Transistors 2SC3863 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SA1502 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto
8.13. Size:172K cn sptech
2sc3866.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage V = 900V(Min) (BR)CBO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V
8.14. Size:223K inchange semiconductor
2sc3866-220f.pdf 
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 DESCRIPTION With TO-220F package High speed switching High voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (
8.15. Size:225K inchange semiconductor
2sc3866a.pdf 
isc Silicon NPN Power Transistor 2SC3866A DESCRIPTION High Breakdown Voltage V = 1000V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25
8.18. Size:180K inchange semiconductor
2sc3862.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3862 DESCRIPTION High Gain Bandwidth Product f = 2400 MHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner, UHF mixer applications. VHF UHF band RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
Другие транзисторы: 2SC386, 2SC3860, 2SC3861, 2SC3862, 2SC3863, 2SC3864, 2SC3865, 2SC3866, BC337, 2SC3868, 2SC3869, 2SC386A, 2SC387, 2SC3870, 2SC3871, 2SC3872, 2SC3873
