2SC3867 Datasheet PDF and Equivalents Search

 ..1. Size:27K  hitachi

 2sc3867.pdf

2SC3867 Silicon NPN Epitaxial Application UHF frequency converter Wide band amplifier Outline MPAK 3 1 1. Base 2. Emitter 2 3. Collector 2SC3867 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipatio... See More ⇒

 ..2. Size:808K  kexin

 2sc3867.pdf

SMD Type Transistors NPN Transistors 2SC3867 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle... See More ⇒

 8.1. Size:168K  1

 2sc3866.pdf

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 8.2. Size:58K  1

 2sc3865.pdf

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 8.3. Size:319K  toshiba

 2sc3862.pdf

2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications Unit mm VHF UHF Band RF Amplifier Applications Exchange of emitter for base in 2SC3120 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector ... See More ⇒

 8.4. Size:88K  sanyo

 2sa1497 2sc3860.pdf

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 8.5. Size:51K  panasonic

 2sc3869.pdf

Power Transistors 2SC3869 Silicon NPN triple diffusion planar type For high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with 1.3 ... See More ⇒

 8.6. Size:59K  panasonic

 2sc3868.pdf

Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Abso... See More ⇒

 8.7. Size:160K  fuji

 2sc3866.pdf

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 8.8. Size:158K  fuji

 2sc3865.pdf

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 8.9. Size:62K  jmnic

 2sc3866.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage- V(BR)CBO= 900V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Coll... See More ⇒

 8.10. Size:152K  jmnic

 2sc3868.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3868 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open ... See More ⇒

 8.11. Size:914K  kexin

 2sc3862.pdf

SMD Type Transistors NPN Transistors 2SC3862 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collecto... See More ⇒

 8.12. Size:736K  kexin

 2sc3863.pdf

SMD Type Transistors NPN Transistors 2SC3863 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SA1502 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto... See More ⇒

 8.13. Size:172K  cn sptech

 2sc3866.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage V = 900V(Min) (BR)CBO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒

 8.14. Size:223K  inchange semiconductor

 2sc3866-220f.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 DESCRIPTION With TO-220F package High speed switching High voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (... See More ⇒

 8.15. Size:225K  inchange semiconductor

 2sc3866a.pdf

isc Silicon NPN Power Transistor 2SC3866A DESCRIPTION High Breakdown Voltage V = 1000V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

 8.16. Size:193K  inchange semiconductor

 2sc3866.pdf

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 8.17. Size:212K  inchange semiconductor

 2sc3868.pdf

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 8.18. Size:180K  inchange semiconductor

 2sc3862.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3862 DESCRIPTION High Gain Bandwidth Product f = 2400 MHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner, UHF mixer applications. VHF UHF band RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒