2SC4083 datasheet и подбор замены

 ..1. Size:1101K  rohm
 2sc4083.pdf 

2SC4083 Datasheet High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) lOutline l SOT-323 Parameter Value SC-70 VCEO 11V IC 50mA UMT3 lFeatures lInner circuit l l 1)High transition frequency.(Typ.fT=3.2GHz) 2)Small rbb' Cc and high gain.(Typ.4ps) 3)Small NF lApplication l UHF/VHF

 ..2. Size:147K  rohm
 2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf 

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM VMT3 Packaging specifications and

 ..3. Size:750K  wietron
 2sc4083.pdf 

2SC4083 NPN Silicon Transistor 3 P b Lead(Pb)-Free 1 2 1. BASE FEATURES 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency SOT-323(SC-70) * High gain with low collector-to base time constant * Low noise (NF) * Marking 1D ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collecto

 0.1. Size:513K  lrc
 l2sc4083pt1g.pdf 

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000

 0.2. Size:174K  lrc
 l2sc4083nwt1g.pdf 

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G

 0.3. Size:170K  lrc
 l2sc4083pwt1g l2sc4083pwt1g.pdf 

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G

 0.4. Size:180K  lrc
 l2sc4083qwt1g.pdf 

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G

 0.5. Size:170K  lrc
 l2sc4083pwt1g.pdf 

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G

 0.6. Size:768K  cn yongyutai
 2sc4083pwt1g.pdf 

2SC4083PWT1G o Absolute maximum ratings (Ta=25 C) Symbol Limits Unit Parameter 3 COLLECTOR Collector-base voltage VCBO 20 V VCEO 11 V Collector-emitter voltage 1 Emitter-base voltage VEBO 3 V BASE Collector current IC 50 mA Collector power dissipation PC 0.15 W 2 o Junction temperature EMITTER T 150 C j o Storage temperature Tstg - 55 +150 C Ordering Information D