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2SC4083 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4083
   Código: 1DN
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 20 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3200 MHz
   Ganancia de corriente contínua (hfe): 350
   Paquete / Cubierta: TO236

 Búsqueda de reemplazo de transistor bipolar 2SC4083

 

2SC4083 Datasheet (PDF)

 ..1. Size:1101K  rohm
2sc4083.pdf

2SC4083
2SC4083

2SC4083DatasheetHigh-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)lOutlinel SOT-323 Parameter Value SC-70 VCEO11VIC50mAUMT3 lFeatures lInner circuitl l1)High transition frequency.(Typ.fT=3.2GHz)2)Small rbb'Cc and high gain.(Typ.4ps)3)Small NFlApplicationlUHF/VHF

 ..2. Size:147K  rohm
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf

2SC4083
2SC4083

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and

 ..3. Size:750K  wietron
2sc4083.pdf

2SC4083
2SC4083

2SC4083NPN Silicon Transistor3P b Lead(Pb)-Free121. BASEFEATURES:2. EMITTER3. COLLECTOR* Radio frequency amplifier* High transition frequency SOT-323(SC-70)* High gain with low collector-to base time constant* Low noise (NF)* Marking: 1D( T =25C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitVCBOCollector-Base Voltage 20 VVCEOCollecto

 0.1. Size:513K  lrc
l2sc4083pt1g.pdf

2SC4083
2SC4083

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierL2SC4083NT1GTransistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.Ordering InformationDevice Marking ShippingL2SC4083NT1G3000

 0.2. Size:174K  lrc
l2sc4083nwt1g.pdf

2SC4083
2SC4083

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083NWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083NWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083NWT1G

 0.3. Size:170K  lrc
l2sc4083pwt1g l2sc4083pwt1g.pdf

2SC4083
2SC4083

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083PWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083PWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083PWT1G

 0.4. Size:180K  lrc
l2sc4083qwt1g.pdf

2SC4083
2SC4083

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083QWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083QWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083QWT1G

 0.5. Size:170K  lrc
l2sc4083pwt1g.pdf

2SC4083
2SC4083

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083PWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083PWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083PWT1G

 0.6. Size:768K  cn yongyutai
2sc4083pwt1g.pdf

2SC4083
2SC4083

2SC4083PWT1Go Absolute maximum ratings (Ta=25 C)Symbol Limits UnitParameter3COLLECTORCollector-base voltage VCBO 20VVCEO 11 VCollector-emitter voltage1Emitter-base voltage VEBO 3 VBASECollector current IC 50 mACollector power dissipation PC 0.15W2oJunction temperatureEMITTERT 150 CjoStorage temperatureTstg - 55~+150COrdering InformationD

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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